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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Jespersen, Thomas Sand
Technical University of Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabricationcitations
- 2024Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabricationcitations
- 2023Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowirescitations
- 2022Doubling the mobility of InAs/InGaAs selective area grown nanowirescitations
- 2022Freestanding Perovskite Oxide Filmscitations
- 2021Superconductivity and Parity Preservation in As-Grown in Islands on InAs Nanowirescitations
- 2021Superconductivity and Parity Preservation in As-Grown In Islands on InAs Nanowirescitations
- 2020Shadow Epitaxy for In Situ Growth of Generic Semiconductor/Superconductor Hybridscitations
- 2017Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowirescitations
- 2015Hard gap in epitaxial semiconductor-superconductor nanowirescitations
- 2013Low temperature transport in p-doped InAs nanowirescitations
Places of action
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article
Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabrication
Abstract
Freestanding oxide membranes provide a promising path for integrating devices on silicon and flexible platforms. To ensure optimal device performance, these membranes must be of high crystal quality, stoichiometric, and their morphology free from cracks and wrinkles. Often, layers transferred on substrates show wrinkles and cracks due to a lattice relaxation from an epitaxial mismatch. Doping the sacrificial layer of Sr<sub>3</sub>Al<sub>2</sub>O<sub>6</sub> (SAO) with Ca or Ba offers a promising solution to overcome these challenges, yet its effects remain critically underexplored. A systematic study of doping Ca into SAO is presented, optimizing the pulsed laser deposition (PLD) conditions, and adjusting the supporting polymer type and thickness, demonstrating that strain engineering can effectively eliminate these imperfections. Using SrTiO<sub>3</sub> as a case study, it is found that Ca<sub>1.5</sub>Sr<sub>1.5</sub>Al<sub>2</sub>O<sub>6</sub> offers a near‐perfect match and a defect‐free freestanding membrane. This approach, using the water‐soluble Ba<sub>x</sub>/Ca<sub><i>x</i></sub>Sr<sub>3‐<i>x</i></sub>Al<sub>2</sub>O<sub>6</sub> family, paves the way for producing high‐quality, large freestanding membranes for functional oxide devices.