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Mukherjee, Samik
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article
Low-Temperature ALD of SbOx/Sb2Te3 Multilayers with Boosted Thermoelectric Performance
Abstract
<p>Nanoscale superlattice (SL) structures have proven to be effective in enhancing the thermoelectric (TE) properties of thin films. Herein, the main phase of antimony telluride (Sb<sub>2</sub>Te<sub>3</sub>) thin film with sub-nanometer layers of antimony oxide (SbO<sub>x</sub>) is synthesized via atomic layer deposition (ALD) at a low temperature of 80 °C. The SL structure is tailored by varying the cycle numbers of Sb<sub>2</sub>Te<sub>3</sub> and SbO<sub>x</sub>. A remarkable power factor of 520.8 µW m<sup>−1</sup> K<sup>−2</sup> is attained at room temperature when the cycle ratio of SbO<sub>x</sub> and Sb<sub>2</sub>Te<sub>3</sub> is set at 1:1000 (i.e., SO:ST = 1:1000), corresponding to the highest electrical conductivity of 339.8 S cm<sup>−1</sup>. The results indicate that at the largest thickness, corresponding to ten ALD cycles, the SbOx layers act as a potential barrier that filters out the low-energy charge carriers from contributing to the overall electrical conductivity. In addition to enhancing the scattering of the mid-to-long-wavelength at the SbO<sub>x</sub>/Sb<sub>2</sub>Te<sub>3</sub> interface, the presence of the SbO<sub>x</sub> sub-layer induces the confinement effect and strain forces in the Sb<sub>2</sub>Te<sub>3</sub> thin film, thereby effectively enhancing the Seebeck coefficient and reducing the thermal conductivity. These findings provide a new perspective on the design of SL-structured TE materials and devices.</p>