| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lehmann, Sebastian
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (28/28 displayed)
- 2024Microheater Controlled Crystal Phase Engineering of Nanowires Using In Situ Transmission Electron Microscopycitations
- 2024Microheater Controlled Crystal Phase Engineering of Nanowires Using In Situ Transmission Electron Microscopycitations
- 2024SnS2 Thin Film with In Situ and Controllable Sb Doping via Atomic Layer Deposition for Optoelectronic Applicationscitations
- 2024Low-Temperature ALD of SbOx/Sb2Te3 Multilayers with Boosted Thermoelectric Performancecitations
- 2023Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungstencitations
- 2022Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistorscitations
- 2022Encapsulation of locally welded silver nanowire with water-free ALD-SbOx for flexible thin-film transistors
- 2022Aero-TiO2 Prepared on the Basis of Networks of ZnO Tetrapods
- 2022The Role of Al2O3 ALD Coating on Sn-Based Intermetallic Anodes for Rate Capability and Long-Term Cycling in Lithium-Ion Batteriescitations
- 2021Current State-of-the-Art in the Interface/Surface Modification of Thermoelectric Materials
- 2021Vapor-solid-solid growth dynamics in GaAs nanowirescitations
- 2020Non-resonant Raman scattering of wurtzite GaAs and InP nanowirescitations
- 2018Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistorscitations
- 2018Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarizationcitations
- 2018Atomic-resolution spectrum imaging of semiconductor nanowirescitations
- 2017Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowirescitations
- 2017Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffractioncitations
- 2017Thermodynamic stability of gold-assisted InAs nanowire growthcitations
- 2017Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowirescitations
- 2017Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffractioncitations
- 2016Can antimonide-based nanowires form wurtzite crystal structure?citations
- 2015Phase Transformation in Radially Merged Wurtzite GaAs Nanowires.citations
- 2012High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowirescitations
- 2012High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowirescitations
- 2011Chalcopyrite Semiconductors for Quantum Well Solar Cellscitations
- 2011Parameter space mapping of InAs nanowire crystal structurecitations
- 2010Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materialscitations
- 2009Structural Properties of Chalcopyrite-related 1:3:5 Copper-poor Compounds and their Influence on Thin-film Devicescitations
Places of action
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article
Low-Temperature ALD of SbOx/Sb2Te3 Multilayers with Boosted Thermoelectric Performance
Abstract
<p>Nanoscale superlattice (SL) structures have proven to be effective in enhancing the thermoelectric (TE) properties of thin films. Herein, the main phase of antimony telluride (Sb<sub>2</sub>Te<sub>3</sub>) thin film with sub-nanometer layers of antimony oxide (SbO<sub>x</sub>) is synthesized via atomic layer deposition (ALD) at a low temperature of 80 °C. The SL structure is tailored by varying the cycle numbers of Sb<sub>2</sub>Te<sub>3</sub> and SbO<sub>x</sub>. A remarkable power factor of 520.8 µW m<sup>−1</sup> K<sup>−2</sup> is attained at room temperature when the cycle ratio of SbO<sub>x</sub> and Sb<sub>2</sub>Te<sub>3</sub> is set at 1:1000 (i.e., SO:ST = 1:1000), corresponding to the highest electrical conductivity of 339.8 S cm<sup>−1</sup>. The results indicate that at the largest thickness, corresponding to ten ALD cycles, the SbOx layers act as a potential barrier that filters out the low-energy charge carriers from contributing to the overall electrical conductivity. In addition to enhancing the scattering of the mid-to-long-wavelength at the SbO<sub>x</sub>/Sb<sub>2</sub>Te<sub>3</sub> interface, the presence of the SbO<sub>x</sub> sub-layer induces the confinement effect and strain forces in the Sb<sub>2</sub>Te<sub>3</sub> thin film, thereby effectively enhancing the Seebeck coefficient and reducing the thermal conductivity. These findings provide a new perspective on the design of SL-structured TE materials and devices.</p>