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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Hirschmann, Eric
Helmholtz-Zentrum Dresden-Rossendorf
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Controlling Magneto‐Ionics by Defect Engineering Through Light Ion Implantationcitations
- 2024Controlling Magneto-Ionics by Defect Engineering Through Light Ion Implantationcitations
- 2024Positron annihilation analysis of nanopores and growth mechanism of oblique angle evaporated TiO2 and SiO2 thin films and multilayers
- 2022Defect Nanostructure and its Impact on Magnetism of α-Cr2O3 thin filmscitations
- 2022Effect of Neutron Flux on an Irradiation-Induced Microstructure and Hardening of Reactor Pressure Vessel Steelscitations
- 2022The mechanism behind the high radiation tolerance of Fe–Cr alloyscitations
- 2022Interface effect of Fe and Fe<sub>2</sub>O<sub>3</sub> on the distributions of ion induced defectscitations
- 2021Analyse der Porenstruktur in Schichtsystemen von kontrolliert extrahierten Natrium-Borosilikat-Glasplatten am digital optimierten monoenergetischen Positronen-Strahl des HZDR
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article
Defect Nanostructure and its Impact on Magnetism of α-Cr2O3 thin films
Abstract
<jats:title>Abstract</jats:title><jats:p>Thin films of the magnetoelectric insulator <jats:bold>α</jats:bold>‐Cr<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> are technologically relevant for energy‐efficient magnetic memory devices controlled by electric fields. In contrast to single crystals, the quality of thin Cr<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films is usually compromised by the presence of point defects and their agglomerations at grain boundaries, putting into question their application potential. Here, the impact of the defect nanostructure, including sparse small‐volume defects and their complexes is studied on the magnetic properties of Cr<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin films. By tuning the deposition temperature, the type, size, and relative concentration of defects is tailored, which is analyzed using the positron annihilation spectroscopy complemented with electron microscopy studies. The structural characterization is correlated with magnetotransport measurements and nitrogen‐vacancy microscopy of antiferromagnetic domain patterns. Defects pin antiferromagnetic domain walls and stabilize complex multidomain states with a domain size in the sub‐micrometer range. Despite their influence on the domain configuration, neither small open‐volume defects nor grain boundaries in Cr<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin films affect the Néel temperature in a broad range of deposition parameters. The results pave the way toward the realization of spin‐orbitronic devices where magnetic domain patterns can be tailored based on defect nanostructures without affecting their operation temperature.</jats:p>