People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Coletti, Camilla
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2024Decoupled High‐Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Depositioncitations
- 2024Heterocontact-Triggered 1H to 1T′ Phase Transition in CVD-Grown Monolayer MoTe2 : Implications for Low Contact Resistance Electronic Devicescitations
- 2024Heterocontact-Triggered 1H to 1T' Phase Transition in CVD-Grown Monolayer MoTe2: Implications for Low Contact Resistance Electronic Devicescitations
- 2023Highly Sensitive Hall Sensors Based on Chemical Vapor Deposition Graphenecitations
- 2023Local dielectric function of hBN-encapsulated WS2 flakes grown by chemical vapor depositioncitations
- 2023Industrial Graphene Coating of Low-Voltage Copper Wires for Power Distributioncitations
- 2023Strong Coupling of Coherent Phonons to Excitons in Semiconducting Monolayer MoTe2citations
- 2022Industrial graphene coating of low-voltage copper wires for power distributioncitations
- 2021Antenna-Coupled Graphene Field-Effect Transistors as a Terahertz Imaging Arraycitations
- 2020Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides.
- 2020Production and processing of graphene and related materials
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materials
- 2020Effect of Chemical Vapor Deposition WS2 on Viability and Differentiation of SH-SY5Y Cellscitations
- 2019Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphenecitations
- 2019Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphenecitations
- 2017Prefacecitations
- 2016Synthesis of Graphene Nanoribbons by Ambient-Pressure Chemical Vapor Deposition and Device Integrationcitations
Places of action
Organizations | Location | People |
---|
article
Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphene
Abstract
The adoption of graphene in electronics, optoelectronics, and photonics is hindered by the difficulty in obtaining high-quality material on technologically relevant substrates, over wafer-scale sizes, and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-catalysts or yielding defective graphene. In this work, a metal-free approach implemented in commercially available reactors to obtain high-quality monolayer graphene on c-plane sapphire substrates via chemical vapor deposition is demonstrated. Low energy electron diffraction, low energy electron microscopy, and scanning tunneling microscopy measurements identify the Al-rich reconstruction (√31×√31) R ± 9° of sapphire to be crucial for obtaining epitaxial graphene. Raman spectroscopy and electrical transport measurements reveal high-quality graphene with mobilities consistently above 2000 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. The process is scaled up to 4 and 6 in. wafers sizes and metal contamination levels are retrieved to be within the limits for back-end-of-line integration. The growth process introduced here establishes a method for the synthesis of wafer-scale graphene films on a technologically viable basis.