| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Whelan, Patrick Rebsdorf
Technical University of Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Mapping nanoscale carrier confinement in polycrystalline graphene by terahertz spectroscopycitations
- 2022Chemical Vapor-Deposited Graphene on Ultraflat Copper Foils for van der Waals Hetero-Assemblycitations
- 2021Nonlinear conductivity response of graphene on thin polymeric film detected by reflection-mode air-plasma THz-TDS
- 2020Fermi velocity renormalization in graphene probed by terahertz time-domain spectroscopycitations
- 2019Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphenecitations
- 2019Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphenecitations
- 2018Conductivity mapping of graphene on polymeric films by terahertz time-domain spectroscopycitations
- 2018Non-destructive Thickness Mapping of Wafer-Scale Hexagonal Boron Nitride Down to a Monolayercitations
- 2017Sputtering an exterior metal coating on copper enclosure for large-scale growth of single-crystalline graphene:Papercitations
- 2017Sputtering an exterior metal coating on copper enclosure for large-scale growth of single-crystalline graphenecitations
- 2016Copper Oxidation through Nucleation Sites of Chemical Vapor Deposited Graphenecitations
- 2016Transfer and characterization of large-area CVD graphene for transparent electrode applications
Places of action
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article
Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphene
Abstract
The adoption of graphene in electronics, optoelectronics, and photonics is hindered by the difficulty in obtaining high-quality material on technologically relevant substrates, over wafer-scale sizes, and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-catalysts or yielding defective graphene. In this work, a metal-free approach implemented in commercially available reactors to obtain high-quality monolayer graphene on c-plane sapphire substrates via chemical vapor deposition is demonstrated. Low energy electron diffraction, low energy electron microscopy, and scanning tunneling microscopy measurements identify the Al-rich reconstruction (√31×√31) R ± 9° of sapphire to be crucial for obtaining epitaxial graphene. Raman spectroscopy and electrical transport measurements reveal high-quality graphene with mobilities consistently above 2000 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. The process is scaled up to 4 and 6 in. wafers sizes and metal contamination levels are retrieved to be within the limits for back-end-of-line integration. The growth process introduced here establishes a method for the synthesis of wafer-scale graphene films on a technologically viable basis.