| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Longo, Massimo
University of Rome Tor Vergata
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation
- 2024Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation
- 2022Growth, electronic and electrical characterization of Ge-Rich Ge-Sb-Te alloycitations
- 2022Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowirescitations
- 2022Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloycitations
- 2022Interface formation during the growth of phase change material heterostructures based on Ge-Rich Ge-Sb-Te alloyscitations
- 2021Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Siliconcitations
- 2021Large-Area {MOVPE} Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)citations
- 2021Spin-Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonancecitations
- 2019High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growthcitations
- 2018Weak Antilocalization in Granular Sb2Te3 Thin Films Deposited by MOCVDcitations
Places of action
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article
High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth
Abstract
Sb2Te3 exhibits several technologically relevant properties, such as high thermoelectric efficiency, topological insulator character, and phase change memory behavior. Improved performances are observed and novel effects are predicted for this and other chalcogenide alloys when synthetized in the form of high-aspect-ratio nanostructures. The ability to grow chalcogenide nanowires and nanopillars (NPs) with high crystal quality in a controlled fashion, in terms of their size and position, can boost the realization of novel thermoelectric, spintronic, and memory devices. Here, it is shown that highly dense arrays of ultrascaled Sb2Te3 NPs can be grown by metal organic chemical vapor deposition (MOCVD) on patterned substrates. In particular, crystalline Sb2Te3 NPs with a diameter of 20 nm and a height of 200 nm are obtained in Au-functionalized, anodized aluminum oxide (AAO) templates with a pore density of ≈5 × 10^10 cm^−2. Also, MOCVD growth of Sb2Te3 can be followed either by mechanical polishing and chemical etching to produce Sb2Te3 NPs arrays with planar surfaces or by chemical dissolution of the AAO templates to obtain freestanding Sb2Te3 NPs forests. The illustrated growth method can be further scaled to smaller pore sizes and employed for other MOCVD-grown chalcogenide alloys and patterned substrates.