| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kumar, Pramod
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024A review on machinability and optimization of machining parameters of metal matrix compositescitations
- 2024Soft computing techniques for analysing the mechanical properties of egg shell powder-based concretecitations
- 2023Study on Magnetron Sputtered Nb‐Doped ZnO Thin Films switching properties for RRAM Applicationscitations
- 2023Proximity induced band gap opening in topological-magnetic heterostructure (Ni80Fe20/p-TlBiSe2/p-Si) under ambient conditioncitations
- 2022Multifunctional Folic acid‐coated and Doxorubicin Encapsulated Mesoporous Silica Nanocomposites (FA/DOX@Silica) for Cancer Therapeutics, Bioimaging and <i>invitro</i> Studiescitations
- 2020Carboxymethyl fenugreek galactomannan-g-poly(N-isopropylacrylamide-co-N,N'-methylene-bis-acrylamide)-clay based pH/temperature-responsive nanocomposites as drug-carrierscitations
- 2019Effect of average beam power on microstructure and mechanical properties of Nd: YAG laser welding of 304L and st37 steelcitations
- 2019Carrier Induced Hopping to Band Conduction in Pentacenecitations
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article
Study on Magnetron Sputtered Nb‐Doped ZnO Thin Films switching properties for RRAM Applications
Abstract
<jats:title>Abstract</jats:title><jats:p>Resistive switching characteristics of ZnO‐based nanomaterials make them useful candidates for applications in resistive random access memory (RRAM). In the present work, Nb‐doped ZnO thin films prepared using RF sputtering with varying doping concentrations were studied using XRD, UV‐Vis spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive X‐ray Spectroscopy (EDS), I‐V, XPS and AFM measurements to investigate the structural, optical, electrical properties and roughness of the films. The XRD analysis revealed a shift in the (002) peak corresponding to hexagonal wurtzite structure, towards lower angles with increasing doping concentration, indicating a doping‐induced modification of crystal structure. The UV‐Vis spectroscopy showed an increase in the band gap energy with increasing doping concentration. The electrical conductivity of the films was found to increase with doping concentration, as determined by I‐V measurements. The XPS analysis confirmed the presence of Nb in the doped films and provided information on the chemical states of the elements. Overall, the results suggest that Nb doping can significantly modify the structural properties of ZnO thin films which alters the electrical properties to match the requirements for potential applications in memory devices.</jats:p>