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Kharb, Archana Singh
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2024The effect of sputtering parameters and doping on the properties of CrN‐based coatings—A critical reviewcitations
- 2023Study on Magnetron Sputtered Nb‐Doped ZnO Thin Films switching properties for RRAM Applicationscitations
- 2023Impact of sputtering gas on the microstructural, mechanical and wetting properties of vanadium nitride coatingscitations
- 2023A review of mechanical and tribological properties of Ni<sub>3</sub>Al-based coatings-synthesis and high-temperature behaviorcitations
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article
Study on Magnetron Sputtered Nb‐Doped ZnO Thin Films switching properties for RRAM Applications
Abstract
<jats:title>Abstract</jats:title><jats:p>Resistive switching characteristics of ZnO‐based nanomaterials make them useful candidates for applications in resistive random access memory (RRAM). In the present work, Nb‐doped ZnO thin films prepared using RF sputtering with varying doping concentrations were studied using XRD, UV‐Vis spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive X‐ray Spectroscopy (EDS), I‐V, XPS and AFM measurements to investigate the structural, optical, electrical properties and roughness of the films. The XRD analysis revealed a shift in the (002) peak corresponding to hexagonal wurtzite structure, towards lower angles with increasing doping concentration, indicating a doping‐induced modification of crystal structure. The UV‐Vis spectroscopy showed an increase in the band gap energy with increasing doping concentration. The electrical conductivity of the films was found to increase with doping concentration, as determined by I‐V measurements. The XPS analysis confirmed the presence of Nb in the doped films and provided information on the chemical states of the elements. Overall, the results suggest that Nb doping can significantly modify the structural properties of ZnO thin films which alters the electrical properties to match the requirements for potential applications in memory devices.</jats:p>