People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Kumar, Sanjeev
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Automated Porosity Characterization for Aluminum Die Casting Materials Using X-ray Radiography, Synthetic X-ray Data Augmentation by Simulation, and Machine Learningcitations
- 2023Lessons learnt in the first year of an Australian pediatric cardio oncology cliniccitations
- 2023Excitation-wavelength-dependent photoluminescence/electrical conductivity of copper oxide nanorodscitations
- 2023Investigation on mechanical properties of novel natural fiber-epoxy resin hybrid composites for engineering structural applicationscitations
- 2023Study on Magnetron Sputtered Nb‐Doped ZnO Thin Films switching properties for RRAM Applicationscitations
- 2023Interacting with Futuristic Topological Quantum Materials: A Potential Candidate for Spintronics Devicescitations
- 2023Performance of Pozzolan-Based Reactive Magnesia Cement Mixes against Sulphate Attackcitations
- 2023Development of Graphitic 2024 Al Alloy by Mechanical Alloying
- 2023Impregnation of Modified Magnetic Nanoparticles on Low-Cost Agro-Waste-Derived Biochar for Enhanced Removal of Pharmaceutically Active Compounds: Performance Evaluation and Optimization Using Response Surface Methodologycitations
- 2022Investigation on Mechanical Durability Properties of High-Performance Concrete with Nanosilica and Copper Slagcitations
- 2022Investigation on Mechanical Durability Properties of High-Performance Concrete with Nanosilica and Copper Slagcitations
- 2022Mechanical and Durability Studies on Ficus exasperata Leaf Ash Concrete
- 2022Effect of Nano Ground Granulated Blast Furnace Slag (GGBS) Volume % on Mechanical Behaviour of High-Performance Sustainable Concretecitations
- 2022Sputter Deposited Mn‐doped ZnO Thin Film for Resistive Memory Applicationscitations
- 2021Optimal use of temporary clip application during aneurysm surgery – In search of the holy grailcitations
- 2020The modified magnetodielectric response in KNN-CZFMO based particulate multiferroic composite systemcitations
- 2018Isothermal Transformation Behavior and Microstructural Evolution of Micro-Alloyed Steel
- 2018Imaging the Zigzag Wigner Crystal in Confinement-Tunable Quantum Wirescitations
- 2016Abrasion resistance of sustainable green concrete containing waste tire rubber particlescitations
- 2014One-Step Synthesis of Superparamagnetic Fe3O4@PANI Nanocompositescitations
Places of action
Organizations | Location | People |
---|
article
Sputter Deposited Mn‐doped ZnO Thin Film for Resistive Memory Applications
Abstract
<jats:title>Abstract</jats:title><jats:p>Transition metal doped Zinc oxide (ZnO) thin films with wide band gap semiconducting nature have diverse range of applications including, gas sensors, optical and optoelectronic devices, electronics and spintronics spintronic devices etc. In the present study, Manganese (Mn)‐doped ZnO thin films deposited on glass substrates using RF‐magnetron sputtering have been investigated for their optical and electrical behavior aiming at resistive random access memory applications. To study the influence of Mn doping and correlation between the structural and the physical properties of the films, the samples were characterized by X‐ray Diffraction (XRD), Raman spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive X‐ray Spectroscopy (EDS), UV‐VIS spectrophotometry and X‐ray photoelectron spectroscopy (XPS). The films are found to be crystalline and a decrease in lattice parameter from 2.6049 Å to 2.5845 Å, an increase in optical band gap from 3.27 eV to 3.35 eV and a decrease in Urbach energy from 0.222 eV to 0.171 eV, is observed with increase in Mn‐concentration. The electrical performance of the film with highest Mn‐content is found to be more suitable for resistive memory applications. Tailoring the electrical behavior of the film by incorporating Mn as dopant is an important approach to find suitable material combination for novel memory devices.</jats:p>