| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Klimashin, Fedor F.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2024Microstructural and mechanical characterization of steel-copper composite structures fabricated by laser powder bed fusion and induction melting
- 2024Effect of hydrogen on the chemical state, stoichiometry and density of amorphous Al 2 O 3 films grown by thermal atomic layer depositioncitations
- 2024Effect of hydrogen on the chemical state, stoichiometry and density of amorphous Al<sub>2</sub>O<sub>3</sub> films grown by thermal atomic layer depositioncitations
- 2023Unlocking the potential of CuAgZr metallic classes: a comprehensive exploration with combinatorial synthesis, high-throughput characterization, and machine learningcitations
- 2022Synthesis and characterization of TiB x (1.2 ≤ x ≤ 2.8) thin films grown by DC magnetron co-sputtering from TiB 2 and Ti targetscitations
- 2022Synthesis and characterization of TiBx (1.2=x=2.8) thin films grown by DC magnetron co-sputtering from TiB2 and Ti targetscitations
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article
Effect of hydrogen on the chemical state, stoichiometry and density of amorphous Al<sub>2</sub>O<sub>3</sub> films grown by thermal atomic layer deposition
Abstract
<jats:p>Amorphous oxide thin films grown by thermal atomic layer deposition (ALD) typically contain high impurity concentrations of hydrogen, which affects both chemistry and structure and thereby the functional properties, such as the barrier properties in, for example, microelectronic and photovoltaic devices. This study discloses the effect of H incorporation in amorphous Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> ALD oxide films on the local chemical binding states of Al, O and H, as well as the oxide density and stoichiometry, by a combined analytical approach using elastic recoil detection analysis, Rutherford backscattering spectroscopy and full chemical state analysis by dual‐source X‐ray photoelectron spectroscopy (XPS)/hard X‐ray photoelectron spectroscopy (HAXPES). The experimental findings are compared with crystalline anhydrous α‐Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and hydroxide α‐Al (OH)<jats:sub>3</jats:sub> reference phases and further supported by molecular dynamic simulations. It is shown that H preferably forms covalent –OH hydroxyl bonds with O in the nearest‐neighbour coordination spheres of interstitial Al cations, which affects both the ligand electronic polarizability and the bond length of the randomly interconnected [AlO<jats:sub>n</jats:sub>] polyhedral building blocks in the amorphous ALD oxide films.</jats:p>