| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Turlo, Vladyslav
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Directional solidification of Cu with dispersed W nanoparticles: a molecular dynamics study in the context of additive manufacturing
- 2024Energy-efficient microwelding of copper by continuous-wave green laser: Insights into nanoparticle-assisted absorptivity enhancementcitations
- 2024Machine learning potential for the Cu-W systemcitations
- 2024Effect of hydrogen on the chemical state, stoichiometry and density of amorphous Al 2 O 3 films grown by thermal atomic layer depositioncitations
- 2024Effect of hydrogen on the chemical state, stoichiometry and density of amorphous Al<sub>2</sub>O<sub>3</sub> films grown by thermal atomic layer depositioncitations
- 2024Explaining the effect of in-plane strain on thermal degradation kinetics of Cu/W nano-multilayerscitations
- 2023Atomistic simulations of the crystalline-to-amorphous transformation of gamma-Al2O3 nanoparticles: delicate interplay between lattice distortions, stresses, and space chargescitations
- 2023Atomistic simulations of the crystalline-to-amorphous transformation of γ -Al 2 O 3 nanoparticles: delicate interplay between lattice distortions, stresses, and space chargescitations
- 2023Linear complexions directly modify dislocation motion in face-centered cubic alloyscitations
- 2023A molecular dynamics study of Ag-Ni nanometric multilayers: thermal behavior and stabilitycitations
- 2023Machine learning of twin/matrix interfaces from local stress field
- 2023A simple scaling model for balling defect formation during laser powder bed fusioncitations
- 2022Atomistic assessment of melting point depression and enhanced interfacial diffusion of Cu in confinement with AlNcitations
- 2022Evaluating the applicability of classical and neural network interatomic potentials for modeling body centered cubic polymorph of magnesiumcitations
- 2021Segregation competition and complexion coexistence within a polycrystalline grain boundary networkcitations
- 2020Interdependent linear complexion structure and dislocation mechanics in Fe-Nicitations
Places of action
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article
Effect of hydrogen on the chemical state, stoichiometry and density of amorphous Al<sub>2</sub>O<sub>3</sub> films grown by thermal atomic layer deposition
Abstract
<jats:p>Amorphous oxide thin films grown by thermal atomic layer deposition (ALD) typically contain high impurity concentrations of hydrogen, which affects both chemistry and structure and thereby the functional properties, such as the barrier properties in, for example, microelectronic and photovoltaic devices. This study discloses the effect of H incorporation in amorphous Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> ALD oxide films on the local chemical binding states of Al, O and H, as well as the oxide density and stoichiometry, by a combined analytical approach using elastic recoil detection analysis, Rutherford backscattering spectroscopy and full chemical state analysis by dual‐source X‐ray photoelectron spectroscopy (XPS)/hard X‐ray photoelectron spectroscopy (HAXPES). The experimental findings are compared with crystalline anhydrous α‐Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and hydroxide α‐Al (OH)<jats:sub>3</jats:sub> reference phases and further supported by molecular dynamic simulations. It is shown that H preferably forms covalent –OH hydroxyl bonds with O in the nearest‐neighbour coordination spheres of interstitial Al cations, which affects both the ligand electronic polarizability and the bond length of the randomly interconnected [AlO<jats:sub>n</jats:sub>] polyhedral building blocks in the amorphous ALD oxide films.</jats:p>