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Chandra, Venkata
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article
Substrate temperature influenced ZrO2 films for MOS devices
Abstract
<p>The effect of substrate temperature on the direct current magnetron-sputtered zirconium oxide (ZrO<sub>2</sub>) dielectric films was investigated. Stoichiometric of the ZrO<sub>2</sub> thin films was obtained at an oxygen partial pressure of 4.0 × 10<sup>−2</sup> Pa. X-ray diffraction studies revealed that the crystallite size in the layer was increased from 4.8 to 16.1 nm with increase of substrate temperature from 303 to 673 K. Metal-oxide-semiconductor devices were fabricated on ZrO<sub>2</sub>/Si stacks with Al gate electrode. The dielectric properties of ZrO<sub>2</sub> layer and interface quality at ZrO<sub>2</sub>/Si were significantly influenced by the substrate temperature. The dielectric constant increased from 15 to 25, and the leakage current density decreased from 0.12 × 10<sup>−7</sup> to 0.64 × 10<sup>−9</sup> A cm<sup>−2</sup> with the increase of substrate temperature from 303 to 673 K.</p>