People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Tougaard, Sven Mosbæk
University of Southern Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2022QUEELScitations
- 2020Optical properties of molybdenum in the ultraviolet and extreme ultraviolet by reflection electron energy loss spectroscopycitations
- 2020Universal inelastic electron scattering cross-section including extrinsic and intrinsic excitations in XPScitations
- 2017Optical properties and electronic transitions of zinc oxide, ferric oxide, cerium oxide, and samarium oxide in the ultraviolet and extreme ultravioletcitations
- 2016Determination of electronic properties of nanostructures using reflection electron energy loss spectroscopycitations
- 2016Quantitative spectromicroscopy from inelastically scattered photoelectrons in the hard X-ray rangecitations
- 2016Composition dependence of dielectric and optical properties of Hf-Zr-silicate thin films grown on Si(100) by atomic layer depositioncitations
- 2016Band-Gap Widening at the Cu(In,Ga)(S,Se)2 Surface:A Novel Determination Approach Using Reflection Electron Energy Loss Spectroscopycitations
- 2016Band-Gap Widening at the Cu(In,Ga)(S,Se)2 Surfacecitations
- 2016Quantitative analysis of reflection electron energy loss spectra to determine electronic and optical properties of Fe–Ni alloy thin filmscitations
- 2015Effects of cation compositions on the electronic properties and optical dispersion of indium zinc tin oxide thin films by electron spectroscopycitations
- 2014Electronic and optical properties of Fe, Pd, and Ti studied by reflection electron energy loss spectroscopycitations
- 2013Factor analysis and advanced inelastic background analysis in XPScitations
- 2013Surface excitation parameter for allotropic forms of carboncitations
- 2013Effects of gas environment on electronic and optical properties of amorphous indium zinc tin oxide thin filmscitations
- 2011Dielectric response functions of the (0001̄), (101̄3) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopycitations
- 2009Dielectric and optical properties of Zr silicate thin films grown on Si(100) by atomic layer depositioncitations
- 2008Test of validity of the V-type approach for electron trajectories in reflection electron energy loss spectroscopycitations
Places of action
Organizations | Location | People |
---|
article
Universal inelastic electron scattering cross-section including extrinsic and intrinsic excitations in XPS
Abstract
The high importance of X-ray photoelectron spectroscopy (XPS) in surface analysis is well established. In XPS, the shape of the measured peaks is affected by two classes of energy loss: extrinsic losses because of the transport of photoelectrons in the matter and intrinsic losses because of the sudden creation of the static core hole. In order to perform a quantitative, comprehensive determination of the zero-energy loss spectrum, a systematic and physically meaningful background subtraction method must be used. In this paper, we propose a universal analytical expression to model the energy loss cross section of the emitted photoelectrons for transition metals and their oxides. The proposed expression is a generalization of the well-known Tougaard's universal inelastic scattering cross section to also account for the intrinsic losses. We demonstrate the use of this to determine the primary excitation spectra of several transition metals and their oxides, and we compare the results with a more accurate calculation based on the dielectric response model for XPS.