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Bideux, Luc
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Publications (7/7 displayed)
- 2024Angle-resolved X-ray photoelectron spectroscopy intensity modeling of SiNx ultrathin layer grown on Si (100) and Si (111) substrates by N2 plasma treatmentcitations
- 2020Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivationcitations
- 2012Carbon diffusion and reactivity in Mn5Ge3 thin filmscitations
- 2005Passivation of InP(100) substrates: first stages of nitridation by thin InN surface overlayers studied by electron spectroscopiescitations
- 2003First stages of the InP(100) surfaces nitridation studied by AES, EELS and EPEScitations
- 2003First stages of the InP(100) surfaces nitridation studied by AES, EELS and EPEScitations
- 2002Study of InP(100) surface nitridation by x-ray photoelectron spectroscopy.citations
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article
Passivation of InP(100) substrates: first stages of nitridation by thin InN surface overlayers studied by electron spectroscopies
Abstract
This article investigates the nitridation effect of InP(100) semiconductor surfaces performed by a glow discharge cell (GDS). Electron spectroscopies (AES, ESCA) were used to understand the different steps of this process. An important point is the initial quantity of metallic indium on the InP(100) surfaces. Indeed the indium droplets, created in well known quantity, play the role of precursor. At a relatively low temperature T = 523 K, the system undergoes surface restructuration which includes removal of the In droplets and the elaboration of two InN monolayers. P-N bonds and InN bonds have been detected by the analysis of PLMM and InMNN Auger peaks and In4d ESCA peak. However, the presence or not of metallic indium inside this InN overlayer is crucial for the passivation of the substrate. Ex-situ photoluminescence measurements correlated to the electron spectroscopies results have put in