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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Matolin, V.
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Publications (7/7 displayed)
- 2023Evaluation of polycrystalline cerium oxide electrodes for electrochemiluminescent detection of sarcosinecitations
- 2021All-Oxide p-n Junction Thermoelectric Generator Based on SnO xand ZnO Thin Filmscitations
- 2021All-Oxide p-n Junction Thermoelectric Generator Based on SnOx and ZnO Thin Filmscitations
- 2020Morphological, optical and photovoltaic characteristics of MoSe2/SiOx/Si heterojunctionscitations
- 2019Highly sensitive thermoelectric touch sensor based on p-type SnOx thin filmcitations
- 2005Passivation of InP(100) substrates: first stages of nitridation by thin InN surface overlayers studied by electron spectroscopiescitations
- 2002Study of InP(100) surface nitridation by x-ray photoelectron spectroscopy.citations
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article
Study of InP(100) surface nitridation by x-ray photoelectron spectroscopy.
Abstract
Ion beam nitridation of indium phosphide (100) substrates was studied using x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Argon ion bombardment of the InP(100) surface removes the native oxides and induces the formation of three-dimensional indium clusters. After cleaning, the samples were nitrided in an ultrahigh vacuum chamber using a home-made radiofrequency plasma source (13.56 MHz) that allows nitridation at low pressures (10−4 Pa). We have studied the influence of temperature on the nitridation mechanisms. For low temperature (T < 200°C), no variation of the metallic indium droplets was observed; for high temperature (T > 270°C), the first layers of the substrate were damaged. The optimal temperature for the nitridation of InP(100) was found to be 250°C.