Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (6/6 displayed)

  • 2023Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard6citations
  • 2023Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard6citations
  • 2021Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices15citations
  • 20132 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al 2 O 3 , HfO 2 and nanolaminated dielectrics26citations
  • 2013Impact of electrical stress on the electrical characteristics of 2 MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al 2 O 3 , HfO 2 and nanolaminated dielectrics5citations
  • 2011Deposition temperature and thermal annealing effects on the electrical characteristics of atomic layer deposited Al 2 O 3 films on silicon60citations

Places of action

Chart of shared publication
Suãã, Jordi
1 / 1 shared
Miranda, Enrique
2 / 3 shared
Aguirre, Fernando Leonel
2 / 2 shared
Bargallo Gonzalez, Mireia
1 / 1 shared
Gonzalez, Mireia Bargallo
1 / 1 shared
Suñe, Jordi
1 / 1 shared
Castán Lanaspa, María Helena
1 / 2 shared
García, Héctor
1 / 5 shared
Dueñas Carazo, Salvador
1 / 2 shared
Boo, Jonathan
1 / 1 shared
Sahelices, Benjamín
1 / 1 shared
Vinuesa Sanz, Guillermo
1 / 2 shared
González, Mireia B.
1 / 1 shared
Óscar, G. Ossorio
1 / 1 shared
Rafí, J. M.
3 / 4 shared
Dueñas, S.
1 / 1 shared
Beldarrain, O.
3 / 3 shared
Tsunoda, I.
2 / 2 shared
Castán, H.
1 / 1 shared
Zabala, Miguel
3 / 4 shared
García, H.
1 / 1 shared
Gómez, A.
1 / 2 shared
González, M. B.
2 / 2 shared
Ohyama, H.
1 / 2 shared
Takakura, K.
2 / 3 shared
Yoneoka, M.
1 / 1 shared
Chart of publication period
2023
2021
2013
2011

Co-Authors (by relevance)

  • Suãã, Jordi
  • Miranda, Enrique
  • Aguirre, Fernando Leonel
  • Bargallo Gonzalez, Mireia
  • Gonzalez, Mireia Bargallo
  • Suñe, Jordi
  • Castán Lanaspa, María Helena
  • García, Héctor
  • Dueñas Carazo, Salvador
  • Boo, Jonathan
  • Sahelices, Benjamín
  • Vinuesa Sanz, Guillermo
  • González, Mireia B.
  • Óscar, G. Ossorio
  • Rafí, J. M.
  • Dueñas, S.
  • Beldarrain, O.
  • Tsunoda, I.
  • Castán, H.
  • Zabala, Miguel
  • García, H.
  • Gómez, A.
  • González, M. B.
  • Ohyama, H.
  • Takakura, K.
  • Yoneoka, M.
OrganizationsLocationPeople

article

Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard

  • Campabadal, Francesca
  • Gonzalez, Mireia Bargallo
  • Miranda, Enrique
  • Aguirre, Fernando Leonel
  • Suñe, Jordi
Abstract

<jats:title>Abstract</jats:title><jats:p>The ballistic conduction through narrow constrictions connecting charge reservoirs exhibits conductance quantization effects. Since the quantum of conductanceis only related to fundamental constants of nature, these effects might allow the implementation of a standard of resistance, fulfilling the requirements of the 2019 revised International System of Units. Moreover, this standard would be able to work at room temperature and without a magnetic field, thus allowing its on‐chip implementation. In this work, the authors propose that breakdown filaments in thin oxide layers might be useful to this purpose. In particular, conductance quantization effects in nanolaminate Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/HfO<jats:sub>2</jats:sub> dielectrics are reported and the role of intrinsic values of conductance and extrinsic parasitic elements are analyzed. The fact that breakdown filaments are irreversible is an advantage due to their expected stability and to the lack of cycle‐to‐cycle variations (as compared to resistive switching devices). Although the reported sample‐to‐sample variations are still too large for a real application, there is room for improving the controlover breakdown filaments through material design and electroforming conditions. Provided that this control is achieved, an on‐chip implementation of a resistance standard for the realization of self‐calibrating electrical systems and equipment with zero‐chain traceability would be possible.</jats:p>

Topics
  • impedance spectroscopy