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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tejeda, Antonio
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Topics
Publications (18/18 displayed)
- 2024Electronic Structure Evolution in the Temperature Range of Metal–Insulator Transitions on Sn/Ge(111)
- 2024Electronic Structure Evolution in the Temperature Range of Metal–Insulator Transitions on Sn/Ge(111)
- 2019New long-range sub-structure found in the tetragonal phase of CH3NH3PbI3 single crystalscitations
- 2019New long-range sub-structure found in the tetragonal phase of CH3NH3PbI3 single crystalscitations
- 2019Edge states and ballistic transport in zigzag graphene ribbons: The role of SiC polytypescitations
- 2018Hybrid halide perovskites: a new semiconductor for photovoltaics and light emission
- 2017Excitonic Emission and Electron-Phonon coupling in Organic-Inorganic Lead Iodide Perovskite single crystals
- 2017Excitonic Emission and Electron-Phonon coupling in Organic-Inorganic Lead Iodide Perovskite single crystals
- 2016Optical properties of 3D hybrid organic perovskites monocrystals
- 2016Narrow Linewidth Excitonic Emission in Organic-Inorganic Lead Iodide Perovskite Single Crystalscitations
- 2016Excitonic Emission in Organic-Inorganic Lead Iodide Perovskite single crystals
- 2014Atomic and electronic structure of the (2 root 3 x 2 root 3)R30 degrees strained Sn reconstruction on Ge/Si(111)citations
- 2014Graphene: from functionalization to devicescitations
- 2013The 2 root 3 x 2 root 3R30 surface reconstruction of alkali/Si(111):B semiconducting surfaces
- 2013Hydrogen-induced nanotunnel opening within semiconductor subsurfacecitations
- 2010Structure of the indium-rich InSb(001) surfacecitations
- 2010Bipolaronic insulator on alkali/Si(111):B-2√3×2√3R30° interfacescitations
- 2008Spin reorientation transition and magnetic domain structure of Co ultrathin films grown on a faceted Au(455) surfacecitations
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article
Electronic Structure Evolution in the Temperature Range of Metal–Insulator Transitions on Sn/Ge(111)
Abstract
<jats:p>One‐third of monolayer of Sn adatoms on a Ge(111) substrate forms a 2D triangular lattice with one unpaired electron per site. The system presents a metal–insulator transition when decreasing the temperature and it is known to exhibit strong electron–phonon coupling at 120–150 K. Herein, a study of the electronic band structure for α‐Sn/Ge(111) between 150 and 5 K is reported. Both the experimental Fermi surfaces and the energy dispersions along high symmetry directions as a function of the temperature are presented. At 5 K it is observed a weakly or low‐dispersing spectral feature, exhibiting an extended gap in the reciprocal space. This feature is derived from the topmost occupied band, which is metallic at high temperature and which develops a kink associated with the strong electron–phonon coupling. The spectral evolution is partially explained with an increase of the electron–phonon coupling when decreasing the temperature. The increase of the electron–phonon coupling at low temperatures gives light into the new physics of this 2D system. The bandwidth is progressively reduced when reducing the temperature, enhancing the electronic correlation effects, and triggering the Mott transition.</jats:p>