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| Naji, M. |
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| Motta, Antonella |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Azam, Siraj |
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| Ali, M. A. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Texier, Michael
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Publications (7/7 displayed)
- 2024Investigation of Phase Segregation Dynamics in Ge‐Rich GST Thin Films by In Situ X‐Ray Fluorescence Mappingcitations
- 2024Investigation of Phase Segregation Dynamics in Ge‐Rich GST Thin Films by In Situ X‐Ray Fluorescence Mappingcitations
- 2018Redistribution of Metallic Impurities in Si during Annealing and Oxidation: W and Fe
- 2017Piezoelectric response and electrical properties of Pb(Zr 1-x Ti x )O 3 thin films: The role of imprint and compositioncitations
- 2013Evidence of perfect dislocation glide in nanoindented 4H-SiCcitations
- 2009Defects created in N-doped 4H-SiC by flexion in the brittle regime: Stacking fault multiplicity and dislocation cores.citations
- 2007Al-Pd-Mn icosahedral quasicrystal: deformation mechanisms in the brittle domain.citations
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article
Investigation of Phase Segregation Dynamics in Ge‐Rich GST Thin Films by In Situ X‐Ray Fluorescence Mapping
Abstract
<jats:p>Ge‐rich Ge–Sb–Te alloy is a good candidate for future automotive applications due to its high crystallization temperature, which allows good data retention at elevated temperatures. Crystallization in this material is governed by elemental segregation which is key to thermal stability and device performance. In this work, elemental (Ge, Sb, Te) segregation is studied in situ during thermal annealing of Ge‐rich Ge–Sb–Te thin films using X‐ray fluorescence microscopy at ID16B beamline of ESRF with a beam size of 50 nm. Spatially resolved maps of Ge, Te, and Sb fluorescence yield are monitored and statistically analyzed as a function of temperature/time. In all investigated samples Sb appears to segregate much less than Te and Ge, indicating a lower mobility of this element. In situ, fluorescence mapping of samples doped with different amounts of carbon by ion implantation shows that carbon delays Ge and Te segregation to higher temperatures. Comparison with crystallization kinetics monitored by X‐ray diffraction shows a good correlation between the occurrence of spatially resolved chemical inhomogeneities and the appearance of crystallized phases.</jats:p>