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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Richter, Carsten
Leibniz Institute for Crystal Growth
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Full Picture of Lattice Deformation in a Ge<sub>1 − x</sub>Sn<sub>x</sub> Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnx Microdiskscitations
- 2024Full Picture of Lattice Deformation in a Ge 1-x Sn x Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale
- 2023In situ compression of micropillars under coherent X-ray diffraction: a case study of experimental and data-analysis constraintscitations
- 2023Dislocation climb in AlN crystals grown at low-temperature gradients revealed by 3D X-ray diffraction imagingcitations
- 2023The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> Microdiskscitations
- 2022Monolithic and catalyst-free selective epitaxy of InP nanowires on Silicon
- 2021Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxycitations
- 2020Electrically driven transient and permanent phase transformations in highly strained epitaxial BiFeO3 thin filmscitations
- 2019LiTaO 3 defect structures by means of forbidden reflections
- 2019Ferroelectric Self-Poling in GeTe Films and Crystals
- 2017Strontium titanate: From symmetry changes to functionalitycitations
- 2016Analysis of modulated $Ho_{2}PdSi_{3}$ crystal structure at Pd K and Ho L absorption edges using resonant elastic X-scatteringcitations
- 2015Dielectric to pyroelectric phase transition induced by defect migrationcitations
- 2014Surface-near modifications of $mathrm{SrTiO_3}$ local symmetry due to nitrogen implantation investigated by grazing incidence XANEScitations
- 2010Stabilität von $mathrm{Mo/B_4C}$-Multilagenspiegeln für Synchrotronstrahlung und resonante Röntgenstreuung an defekt- und kristallfeldinduzierten Elektronendichteanisotropien in Rutil und $mathrm{BaTiO_{3}}$
Places of action
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article
The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> Microdisks
Abstract
<jats:p>Germanium–tin (GeSn) microdisks are promising structures for complementary metal–oxide–semiconductor‐compatible lasing. Their emission properties depend on Sn concentration, strain, and operating temperature. Critically, the band structure of the alloy varies along the disk due to different lattice deformations associated with mechanical constraints. An experimental and numerical study of Ge<jats:sub>1−<jats:italic>x</jats:italic> </jats:sub>Sn<jats:sub> <jats:italic>x</jats:italic> </jats:sub> microdisk with Sn concentration between 8.5 and 14 at% is reported. Combining finite element method calculations, micro‐Raman and X‐ray diffraction spectroscopy enables a comprehensive understanding of mechanical deformation, where computational predictions are experimentally validated, leading to a robust model and insight into the strain landscape. Through micro‐photoluminescence experiments, the temperature dependence of the bandgap of Ge<jats:sub>1−<jats:italic>x</jats:italic> </jats:sub>Sn<jats:sub> <jats:italic>x</jats:italic> </jats:sub> is parametrized using the Varshni formula with respect to strain and Sn content. These results are the input for spatially dependent band structure calculations based on deformation potential theory. It is observed that Sn content and temperature have comparable effects on the bandgap, yielding a decrease of more than 20 meV for an increase of 1 at% or 100 K, respectively. The impact of the strain gradient is also analyzed. These findings correlate structural properties to emission wavelength and spectral width of microdisk lasers, thus demonstrating the importance of material‐related consideration on the design of optoelectronic microstructures.</jats:p>