| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Leone, Stefano
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Understanding Interfaces in AlScN/GaN Heterostructurescitations
- 2024Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15Ncitations
- 2024Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al<sub>0.85</sub>Sc<sub>0.15</sub>Ncitations
- 2024Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal-organic chemical vapor depositioncitations
- 2024Understanding interfaces in AlScN/GaN heterostructurescitations
- 2023Metal‐Organic Chemical Vapor Deposition of Aluminum Yttrium Nitridecitations
- 2023AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition with 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHzcitations
- 2023Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal-Organic Chemical Vapor Depositioncitations
- 2023Enhanced AlScN/GaN heterostructures grown with a novel precursor by metal–organic chemical vapor depositioncitations
- 2022Leakage mechanism in AlxGa1-xN/GaN heterostructures with AlN interlayercitations
- 2022Leakage mechanism in Al x Ga1−x N/GaN heterostructures with AlN interlayercitations
- 2022Effect of V/III ratio and growth pressure on surface and crystal quality of AlN grown on sapphire by metal-organic chemical vapor depositioncitations
- 2022Effect of V/III ratio and growth pressure on surface and crystal quality of AlN grown on sapphire by metal-organic chemical vapor depositioncitations
- 2021Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor depositioncitations
- 2021Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor depositioncitations
- 2021Technology of GaN-based large area CAVETs with co-integrated HEMTscitations
- 2020Expitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistorscitations
- 2020Metal-organic chemical vapor deposition of aluminum scandium nitridecitations
- 2020Optimization of metal-organic chemical vapor deposition regrown n-GaN ; Optimization of MOCVD Regrown n-GaNcitations
- 2012Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiCcitations
- 2011Nanoscale characterization of electrical transport at metal/3C-SiC interfaces
- 2010Nanoscale characterization of electrical transport at metal/3C-SiC interfacescitations
- 2010Advances in SiC growth using chloride-based CVD
Places of action
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article
Metal‐Organic Chemical Vapor Deposition of Aluminum Yttrium Nitride
Abstract
Transition metal nitrides, namely group 3 (Sc and Y) elements alloyed with AlN, are predicted to enhance several characteristics of wurtzite semiconducting nitrides, thanks to the presence of 3d orbitals and the distortion introduced in the lattice by the large metals. While AlScN is actively researched and grown by several techniques, and already many applications benefit from the enhanced piezoelectric and ferroelectric characteristics of this material. There are very few experimental reports on AlYN and several promising theoretical studies. The growth of AlYN by metal-organic chemical vapor deposition (MOCVD) is reported for the first time. Parameters such as the growth temperature, yttrium concentration in the alloy, and the effect of the underlying template on the epitaxial growth are studied. Structural and morphological characterizations of the epitaxial layers show that the growth of wurtzite AlYN with Y concentration up to 30% can be achieved, but cubic inclusions are formed by raising the growth temperature or the yttrium concentration. Impurities in the precursors and oxidation effects are discussed as well. ; 17 ; 10