| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Prescher, Mario
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2024Understanding Interfaces in AlScN/GaN Heterostructurescitations
- 2024Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmospherecitations
- 2024Online and Ex Situ Damage Characterization Techniques for Fiber-Reinforced Composites under Ultrasonic Cyclic Three-Point Bendingcitations
- 2024Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15Ncitations
- 2024Ultrasonic reconsolidation of separated CF-PEEK composite layers at 20 kHz — an experimental study on parameter optimization and Ex-situ characterizationcitations
- 2024Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al<sub>0.85</sub>Sc<sub>0.15</sub>Ncitations
- 2024Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal-organic chemical vapor depositioncitations
- 2024Understanding interfaces in AlScN/GaN heterostructurescitations
- 2023Metal‐Organic Chemical Vapor Deposition of Aluminum Yttrium Nitridecitations
- 2023Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxycitations
- 2023Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal-Organic Chemical Vapor Depositioncitations
- 2023Enhanced AlScN/GaN heterostructures grown with a novel precursor by metal–organic chemical vapor depositioncitations
- 2022In-situ Detection of Degradation in Power Electronic Modules During Lifetime Testing using Lock-in Thermography
- 2021Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor depositioncitations
- 2021Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor depositioncitations
- 2020In situ approach to fabricate heterojunction p-n CuO-ZnO nanostructures for efficient photocatalytic reactionscitations
- 2020Expitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistorscitations
- 2020Metal-organic chemical vapor deposition of aluminum scandium nitridecitations
- 2020Optimization of metal-organic chemical vapor deposition regrown n-GaN ; Optimization of MOCVD Regrown n-GaNcitations
- 2018Elastic modulus and coefficient of thermal expansion of piezoelectric Al1-xScxN (up to x = 0.41) thin filmscitations
- 2018Elastic modulus and coefficient of thermal expansion of piezoelectric Al1−xScxN (up to x = 0.41) thin filmscitations
Places of action
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article
Metal‐Organic Chemical Vapor Deposition of Aluminum Yttrium Nitride
Abstract
Transition metal nitrides, namely group 3 (Sc and Y) elements alloyed with AlN, are predicted to enhance several characteristics of wurtzite semiconducting nitrides, thanks to the presence of 3d orbitals and the distortion introduced in the lattice by the large metals. While AlScN is actively researched and grown by several techniques, and already many applications benefit from the enhanced piezoelectric and ferroelectric characteristics of this material. There are very few experimental reports on AlYN and several promising theoretical studies. The growth of AlYN by metal-organic chemical vapor deposition (MOCVD) is reported for the first time. Parameters such as the growth temperature, yttrium concentration in the alloy, and the effect of the underlying template on the epitaxial growth are studied. Structural and morphological characterizations of the epitaxial layers show that the growth of wurtzite AlYN with Y concentration up to 30% can be achieved, but cubic inclusions are formed by raising the growth temperature or the yttrium concentration. Impurities in the precursors and oxidation effects are discussed as well. ; 17 ; 10