• Denisov, Viktor
• Lomov, Andrey
• Shulpina, Iren Leonidovna
• Polyakov, Sergey
• Kornilov, Nikolay Vladimirovich

Abstract

<jats:sec><jats:label /><jats:p>Herein, the high‐quality large‐sized single‐crystalline diamond successfully grown by the chemical vapor deposition (CVD) technique is demonstrated. The structure perfection of this diamond is comparable with that of the best diamond single crystals grown by the temperature gradient method under high pressure and high temperature. In addition, CVD diamonds contain far fewer metallic impurities. The high structural quality of this diamond is unambiguously confirmed by the observation of interferrometric fringes (Kato fringes) without any defects in the section X‐ray diffraction images of the areas of 3 × 3 × 1.5 mm<jats:sup>3</jats:sup> size. Moreover, the full width at half maximum of the double‐crystal rocking curves (400) Bragg reflection from defect‐free areas of the diamond is close to theoretical. The nitrogen‐enriched 100 μm‐thick intermediate layer between the substrate and the growing crystal provides avoidance of the defect inheritance of the 1b substrate for homoepitaxial growth. The high‐quality diamond single crystals grown by the CVD method pave the way for application as X‐ray optic elements suitable for operation in high‐power beams of new generation synchrotrons and X‐ray free‐electron lasers.</jats:p></jats:sec>

Topics

• impedance spectroscopy
• single crystal
• Nitrogen
• defect
• size-exclusion chromatography
• chemical vapor deposition