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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Picollo, Federico
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Topics
Publications (8/8 displayed)
- 20243D Printing in Microfluidics: Experimental Optimization of Droplet Size and Generation Time through Flow Focusing, Phase, and Geometry Variation
- 2024Improving the control of the electroforming process in oxide-based memristive devices by X-ray nanopatterningcitations
- 2021Functional Modifications Induced via X‐ray Nanopatterning in TiO 2 Rutile Single Crystalscitations
- 2021Functional Modifications Induced via X‐ray Nanopatterning in TiO<sub>2</sub> Rutile Single Crystalscitations
- 2019Tailoring the Local Conductivity of TiO2 by X‐Ray Nanobeam Irradiationcitations
- 2017Fabrication of monolithic microfluidic channels in diamond with ion beam lithographycitations
- 2013Direct measurement and modelling of internal strains in ion-implanted diamondcitations
- 2009Direct fabrication of three-dimensional buried conductive channels in single crystaldiamond with ion microbeam induced graphitizationcitations
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article
Functional Modifications Induced via X‐ray Nanopatterning in TiO<sub>2</sub> Rutile Single Crystals
Abstract
<jats:sec><jats:label /><jats:p>The possibility to directly write electrically conducting channels in a desired position in rutile TiO<jats:sub>2</jats:sub> devices equipped with asymmetric electrodes—like in memristive devices—by means of the X‐ray nanopatterning (XNP) technique (i.e., intense, localized irradiation exploiting an X‐ray nanobeam) is investigated. Device characterization is carried out by means of a multitechnique approach involving X‐ray fluorescence (XRF), X‐ray excited optical luminescence (XEOL), electrical transport, and atomic force microscopy (AFM) techniques. It is shown that the device conductivity increases and the rectifying effect of the Pt/TiO<jats:sub>2</jats:sub> Schottky barrier decreases after irradiation with doses of the order of 10<jats:sup>11</jats:sup> Gy and fluences of the order of 10<jats:sup>12</jats:sup> J m<jats:sup>−2</jats:sup>. Irradiated regions also show the ability to pin and guide the electroforming process between the electrodes. Indications are that XNP should be able to promote the local formation of oxygen vacancies. This effect could lead to a more deterministic implementation of electroforming, being of interest for production of memristive devices.</jats:p></jats:sec>