| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Weinreich, Wenke
Fraunhofer Institute for Photonic Microsystems
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2022Optimization of LPCVD phosphorous-doped SiGe thin films for CMOS-compatible thermoelectric applicationscitations
- 2022Optimization of LPCVD phosphorous-doped SiGe thin films for CMOS-compatible thermoelectric applicationscitations
- 2021Aging in Ferroelectric Si-Doped Hafnium Oxide Thin Filmscitations
- 2019Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO2 thin filmscitations
- 2019Depth spectroscopy analysis of La-doped HfO2 ALD thin films in 3D structures by HAXPES and ToF-SIMS
- 2019Depth spectroscopy analysis of La-doped HfO2 ALD thin films in 3D structures by HAXPES and ToF-SIMS
- 2019ToF-SIMS 3d analysis of thin films deposited in high aspect ratio structures via atomic layer deposition and chemical vapor depositioncitations
- 2013Surface self-organization and structure of highly doped n-InGaAs ultra-shallow junctions
- 2013TEMAZ/O-3 atomic layer deposition process with doubled growth rate and optimized interface properties in metal-insulator-metal capacitorscitations
- 2011Macroscopic and microscopic electrical characterizations of high-k ZrO 2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structurescitations
Places of action
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article
Aging in Ferroelectric Si-Doped Hafnium Oxide Thin Films
Abstract
Art. 2100023, 6 S. ; The hafnium oxide (HfO2) material system offers a unique combination of outstanding physical properties, that enable a manifold of novel integrated ferroelectric, piezoelectric, and pyroelectric applications. Long-term stability is an essential concern for nonvolatile memory devices, sensors, and nanoelectromechanical systems. Herein, the aging effects of the pyroelectric response in polycrystalline Si-doped HfO2 thin films in the field-free case are reported. It is observed that aging effects are accelerated by high temperatures, lower film thicknesses, and higher dopant concentration. The decay of the pyroelectric coefficients and the dielectric permittivity exhibits a logarithmic time dependence. The full pyroelectric response is restored by repeated electric field cycling (i.e., deaging). After the aging process, a significant internal bias field is observed. It is concluded that the migration of positively charged oxygen vacancies in the films is responsible for this aging process. ; 15 ; Nr.5