| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Noé, Pierre
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Topics
Publications (11/11 displayed)
- 2024Ferroelectric spin orbit devices for ultralow power computing
- 2024Optical Properties of GeSe 1 −x Te x Chalcogenide Materials Promising for on‐Chip Low and Ultra‐Low Loss Reconfigurable Photonics and Nonlinear Devicescitations
- 2023Nanocomposites of chalcogenide phase-change materials: from C-doping of thin films to advanced multilayerscitations
- 2023Origin of the Unusual High Optical Nonlinearities Observed in Glassy Chalcogenidescitations
- 2022Innovative Nanocomposites for Low Power Phase‐Change Memory: GeTe/C Multilayerscitations
- 2021Overcoming the Thermal Stability Limit of Chalcogenide Phase‐Change Materials for High‐Temperature Applications in GeSe<sub>1−<i>x</i></sub>Te<sub><i>x</i></sub> Thin Filmscitations
- 2020Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealedcitations
- 2020Thermal conductivity of amorphous and crystalline GeTe thin film at high temperature: Experimental and theoretical studycitations
- 2020Ovonic Threshold Switching in Se-Rich GexSe1−x Glasses from an Atomistic Point of View: The Crucial Role of the Metavalent Bonding Mechanismcitations
- 2020New insights into thermomechanical behavior of GeTe thin films during crystallizationcitations
- 2020Overcoming the thermal stability limit of chalcogenide Phase‐Change Materials for high‐Temperature applications in GeSe$_{1−x}$ Te$_x$ thin filmscitations
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article
Overcoming the Thermal Stability Limit of Chalcogenide Phase‐Change Materials for High‐Temperature Applications in GeSe<sub>1−<i>x</i></sub>Te<sub><i>x</i></sub> Thin Films
Abstract
<jats:sec><jats:label /><jats:p>The electrical, optical, and structural properties of GeSe<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>Te<jats:sub><jats:italic>x</jats:italic></jats:sub> phase‐change materials thin films with 0.16 ≤ <jats:italic>x</jats:italic> ≤1 prepared by cosputtering of GeSe and GeTe targets are studied. The crystallization temperature of the films increases significantly when the Te content decreases. Se‐rich films show an extremely large electrical contrast between their amorphous and crystalline states. A high polarizability of the crystalline phase is observed in the entire <jats:italic>x</jats:italic> range and is related to the presence of metavalent bonds. This is explained by the persistence of a rhombohedral crystalline phase, isostructural to GeTe, in the GeSe<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>Te<jats:sub><jats:italic>x</jats:italic></jats:sub> films down to <jats:italic>x</jats:italic> = 0.16. Hence, the substitution of only 16 at% of the Se atoms by Te atoms transforms the covalent GeSe into a phase‐change material with a huge and unprecedented contrast of resistivity (up to 11 orders of magnitude) and a very high thermal stability (up to 10 years at 272 °C) for an alloy exhibiting no phase separation upon crystallization. This outstanding combination of properties makes Se‐rich GeSe<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>Te<jats:sub><jats:italic>x</jats:italic></jats:sub> thin films extremely promising for integration in memory devices requiring a very high data retention such as automotive and embedded applications.</jats:p></jats:sec>