| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Rodriguez, Jean-Baptiste
French National Centre for Scientific Research
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024III-V/Si epitaxial growth and antiphase domains: a matter of symmetry
- 2024Kinetic Monte Carlo simulation of GaAs growth on (001) Silicon
- 2024Understanding III-V/Si Heteroepitaxy: Experiments and Theory
- 2022Mid-infrared III–V semiconductor lasers epitaxially grown on Si substratescitations
- 2022Mid-infrared III–V semiconductor lasers epitaxially grown on Si substratescitations
- 2022Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Siliconcitations
- 2022Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Siliconcitations
- 2021GaSb-based laser diodes grown on MOCVD GaAs-on-Si templatescitations
- 2021GaSb-based laser diodes grown on MOCVD GaAs-on-Si templatescitations
- 2021Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Siliconcitations
- 2020Zinc-blende group III-V/group IV epitaxy: Importance of the miscutcitations
- 2020Mid-infrared laser diodes epitaxially grown on on-axis (001) siliconcitations
- 2019The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substratescitations
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2018Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor depositioncitations
- 2015Terahertz studies of 2D and 3D topological transitions
- 2014Silicon-based photonic integration beyond the telecommunication wavelength rangecitations
- 2014Mid-IR heterogeneous silicon photonicscitations
- 2013Integrated thin-film GaSb-based Fabry-Perot lasers: towards a fully integrated spectrometer on a SOI waveguide circuitcitations
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article
The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substrates
Abstract
Several nanometer high steps are observed by (scanning) transmission electron microscopy at the surface and interfaces in heteroepitaxially grown III–Sb layers on vicinal Si(001) substrates. Their relations with antiphase boundaries (APBs) and threading dislocations (TDs) are elaborated. An asymmetric number density of TDs on symmetry-equivalent {111} lattice planes is revealed and explained according to the substrate miscut and the lattice misfit in the heteroepitaxial material system. Finally, a step bunching mechanism is proposed based on the interplay of APBs, TDs, and the vicinal surface of the miscut substrate. ; publishedVersion