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Friedl, Martin
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article
Nanosails Showcasing Zn3As2 as an Optoelectronic-Grade Earth Abundant Semiconductor
Abstract
<p>Zn<sub>3</sub>As<sub>2</sub> is a promising earth-abundant semiconductor material. Its bandgap, around 1 eV, can be tuned across the infrared by alloying and makes this material suited for applications in optoelectronics. Here, we report the crystalline structure and electrical properties of strain-free Zn<sub>3</sub>As<sub>2</sub> nanosails, grown by metal-organic vapor phase epitaxy. We demonstrate that the crystalline structure is consistent with the P4<sub>2</sub>/nmc ((D<sup>15</sup><sub>4h</sub>)) α”-Zn<sub>3</sub>As<sub>2</sub> metastable phase. Temperature-dependent Hall effect measurements indicate that the material is degenerately p-doped with a hole mobility close to 10<sup>3</sup> cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>. Our results display the potential of Zn<sub>3</sub>As<sub>2</sub> nanostructures for next generation energy harvesting and optoelectronic devices.</p>