• Zad, Azam Iraji
• Hosseini, Seyed Ali
• Hasheminejad, Meisam
• Vesali, Newsha
• Pourfath, Mahdi
• Azizmohseni, Sina
• Jamilpanah, Loghman

Abstract

<jats:sec><jats:label /><jats:p>Unidirectional current flow is at the heart of modern electronics, which has been conceived by making p–n junctions or Schottky barriers between different kinds of materials. Within such elements, however, synthesis of thin film lateral heterostructures has so far remained challenging. Here, a one‐step simple synthesis of p‐type, n‐type, and metallic lateral heterostructures using bipolar electrodeposition (BPE) technique is reported. Molybdenum oxides and sulfides with gradient of oxygen and sulfur are deposited at a metallic substrate. A lateral heterostructure is achieved with electrical properties that change from p‐ to n‐type semiconductor and then to metal by moving in the plane of the layer. This effect is observed due to an increase in MoO­<jats:sub>2</jats:sub> and reduction of MoS<jats:sub>x</jats:sub> from one side to the other side of the structure. Finally, by transferring the layer onto a dielectric substrate, the current–voltage (<jats:italic>I–V</jats:italic>) characteristic of the layer is found to show a rectifying behavior with a low threshold of 0.45 V and a rectification of about 10 at relatively low applied voltages.</jats:p></jats:sec>

Topics

• impedance spectroscopy
• molybdenum
• thin film
• Oxygen
• semiconductor
• size-exclusion chromatography
• electrodeposition