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Hussain, Muhammad
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Publications (5/5 displayed)
- 2017Enhanced Performance of MoS2 Photodetectors by Inserting an ALD-Processed TiO2 Interlayercitations
- 2016Noble metal nanoparticle-functionalized ZnO nanoflowers for photocatalytic degradation of RhB dye and electrochemical sensing of hydrogen peroxidecitations
- 2015Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline siliconcitations
- 2014Low-cost high-quality crystalline germanium based flexible devicescitations
- 2014Transformational silicon electronicscitations
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article
Low-cost high-quality crystalline germanium based flexible devices
Abstract
High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.