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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Baryshnikova, Marina
IMEC
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Publications (3/3 displayed)
- 2022Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineeringcitations
- 2021Low dark current and high responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafercitations
- 2015Kinetic Study of MOCVD of NiO films from bis-(ethylcyclopentadienyl) nickelcitations
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article
Kinetic Study of MOCVD of NiO films from bis-(ethylcyclopentadienyl) nickel
Abstract
NiO films were grown by metal-organic chemical vapor deposition (MOCVD) using bis-(ethylcyclopentadienyl) nickel [(EtCp)2Ni] and oxygen or ozone as precursors. The kinetic regularities of MOCVD processes were experimentally studied in the deposition temperature range 600-820 K for the reaction systems: (EtCp)2Ni–O2–Ar and (EtCp)2Ni–O3–O2–Ar. The results obtained show that the deposition processes in the temperature range 600-700 K are controlled by kinetics and the value of activation energy of the processes is 80±5 kJ·mol−1 in both cases. The growth process in the temperature region 700–840 K is controlled by mass transport. An introduction of ozone in the reaction gas phase led to nearly twofold decrease of deposition rate probably because of homogeneous reactions with (EtCp)2Ni.