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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Wei, Yong
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Publications (3/3 displayed)
- 2023Versatile recognition of graphene layers from optical images under controlled illumination through green channel correlation methodcitations
- 2014Optically pumped AlGaN quantum‐well lasers at sub‐250 nm grown by MOCVD on AlN substratescitations
- 2013Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substratecitations
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article
Optically pumped AlGaN quantum‐well lasers at sub‐250 nm grown by MOCVD on AlN substrates
Abstract
<jats:title>Abstract</jats:title><jats:p>In this study, we employed bulk (0001) AlN substrates for the metalorganic chemical vapor deposition growth of AlGaN multi‐quantum‐well heterostructures in an Aixtron 6 × 2″ close‐coupled showerhead reactor. The wafers were fabricated into cleaved bars with a cavity length of ∼1 mm. Two different layer structure designs are presented in this work. Both laser bars were optically pumped by a pulsed 193 nm ArF excimer laser at room temperature. The lasing wavelengths are 243.5 nm and 245.3 nm with threshold power density 427 kW/cm<jats:sup>2</jats:sup> and 297 kW/cm<jats:sup>2</jats:sup>, respectively. Both laser bars showed transverse electric‐polarization‐dominated optical emission when operating above threshold. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>