| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Schwarz, R.
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Topics
Publications (15/15 displayed)
- 2022Spin-induced asymmetry reaction - The formation of asymmetric carbon by electropolymerizationcitations
- 2014Tungsten trioxide nanostructured electrodes for organic dye sensitised solar cellscitations
- 2013Optical properties of lead-free NKN films from transmission and spectral ellipsometrycitations
- 2012Complex dielectric function in lead-free NKN filmscitations
- 2012Transfer characteristic of zinc nitride based thin film transistorscitations
- 2012Development of lead-free materials for piezoelectric energy harvestingcitations
- 2012Secondary electron emission yield (SEY) in amorphous and graphitic carbon films prepared by PLDcitations
- 2010Local electromechanical properties of ZnO thin films and microcrystals
- 2010Optical properties of TiO(2) thin films prepared by chemical spray pyrolysis from aqueous solutionscitations
- 2010Local piezoelectric properties of ZnO thin films prepared by RF-plasma-assisted pulsed-laser deposition methodcitations
- 2010RF-plasma assisted PLD growth of Zn3N2 thin filmscitations
- 2009Morphological and optical properties of silicon thin films by PLDcitations
- 2008Study of trap states in zinc oxide (ZnO) thin films for electronic applicationscitations
- 2007ZnO films grown by laser ablation with and without oxygen CVDcitations
- 2007Photoinduced excess carrier dynamics in PLD-grown ZnOcitations
Places of action
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document
Transfer characteristic of zinc nitride based thin film transistors
Abstract
Polycrystalline zinc nitride (Zn3N2) thin films were prepared on quartz and aluminum tin oxide /indium tin oxide (ATO/ITO) and SiO2-covered crystalline silicon by reactive pulsed laser ablation (PLD) of a metallic zinc target using a pulsed Nd:YAG laser, assisted by a 13.56 MHz radio-frequency (RF) nitrogen plasma. The microstructural, optical and electrical properties of the as-deposited films were studied by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD), low-temperature photoluminescence (PL), optical transmittance, and field effect transistor I-V measurements. SEM revealed a compact and crack-free film surface. XRD study indicated that the Zn3N2 films deposited at 673 K substrate temperature were cubic, with lattice constant a = 0.97 nm and having no preferred orientation. PL spectra taken at 4.2 K show a 7-9 meV wide exciton-related peak at 3.59 eV. The optical absorption coefficient, estimated from the transmission spectra using Beer's law, was utilized to determine the optical band gap of the films. The Zn3N2 showed a direct band gap of similar to 3.2 eV at room temperature. Transparent field effect transistor structures with a 200 nm thick Zn3N2 film as active channel layer exhibited non-linear I-V transfer characteristics, which is typical of devices having a large density of interface trap states. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim