Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (6/6 displayed)

  • 2013Local structure of amorphous GaN1-xAsx semiconductor alloys across the composition range6citations
  • 2013Microstructure of Mg doped GaNAs alloys1citations
  • 2012Structural studies of GaN 1-x As x and GaN 1-x Bi x alloys for solar cell applications3citations
  • 2011GaNAs alloys over the whole composition range grown on crystalline and amorphous substrates9citations
  • 2010GaN1-xBix34citations
  • 2010Low gap amorphous GaN1-x Asx alloys grown on glass substrate19citations

Places of action

Chart of shared publication
Liliental-Weber, Z.
5 / 25 shared
Walukiewicz, W.
6 / 87 shared
Foxon, C. T.
6 / 36 shared
Wu, J.
5 / 56 shared
Dubon, O. D.
4 / 40 shared
Novikov, S. V.
6 / 22 shared
Reis, R. D.
1 / 1 shared
Reis, R. Dos
1 / 3 shared
Dubon, O.
1 / 1 shared
Luckert, F.
1 / 3 shared
Martin, R. W.
1 / 11 shared
Broesler, R.
2 / 8 shared
Tseng, A.
1 / 1 shared
Kao, V. M.
1 / 2 shared
Chart of publication period
2013
2012
2011
2010

Co-Authors (by relevance)

  • Liliental-Weber, Z.
  • Walukiewicz, W.
  • Foxon, C. T.
  • Wu, J.
  • Dubon, O. D.
  • Novikov, S. V.
  • Reis, R. D.
  • Reis, R. Dos
  • Dubon, O.
  • Luckert, F.
  • Martin, R. W.
  • Broesler, R.
  • Tseng, A.
  • Kao, V. M.
OrganizationsLocationPeople

article

Structural studies of GaN 1-x As x and GaN 1-x Bi x alloys for solar cell applications

  • Levander, A. X.
  • Liliental-Weber, Z.
  • Walukiewicz, W.
  • Foxon, C. T.
  • Reis, R. Dos
  • Novikov, S. V.
Abstract

We have discovered materials with a wide tunability of the band gap that opens the possibility to achieve a desirable material for multi-junction solar cells. Two different alloy systems have been studied. GaN <sub>1-x</sub>As <sub>x</sub> alloys over the entire composition range were grown by plasma-assisted MBE at low temperature on crystalline and amorphous (glass) substrates. For growth on sapphire the alloys are amorphous in the composition range of 0.171-xAs <sub>x</sub> alloys ranges from 3.4-0.7 eV, covering a large part of the solar spectrum, therefore this material is potentially useful for solar energy conversion. The substitution of N by Bi in GaN forming GaN <sub>1-x</sub> Bi <sub>x</sub> is extremely difficult since Bi and N have even larger differences in size and electronegativity. TEM studies of GaN <sub>1-x</sub>Bi <sub>x</sub> with x up to 0.2 show that the alloy is not entirely amorphous. Small crystallites embedded in an amorphous matrix are observed and Bi segregation was confirmed by Electron Energy Loss studies. A strong reduction in band gap is observed in samples with increasing Bi, suggesting the formation of a random alloy but low energy absorption tail may be related to the presence of the crystallites observed by TEM. © 2012 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim.

Topics
  • impedance spectroscopy
  • amorphous
  • glass
  • glass
  • transmission electron microscopy
  • forming
  • random
  • x-ray absorption spectroscopy