| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Walther, Thomas
University of Sheffield
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2022Think outside the boxcitations
- 2022Long-Term Outcomes after Aortic Valve and Root Replacement in a Very High-Risk Populationcitations
- 2021Identity of the local and macroscopic dynamic elastic responses in supercooled 1-propanolcitations
- 2017Impact of buffer gas quenching on the 1S0 → 1P1 ground-state atomic transition in nobeliumcitations
- 2017Study of phase separation in an InGaN alloy by electron energy loss spectroscopy in an aberration corrected monochromated scanning transmission electron microscopecitations
- 2017Impact of buffer gas quenching on the $^1S_0 → ^1P_1$ ground-state atomic transition in nobeliumcitations
- 2017Impact of buffer gas quenching on the $^1S_0$ $to$ $^1P_1$ ground-state atomic transition in nobeliumcitations
- 2014A laser locked Fabry-Perot etalon with 3 cm/s stability for spectrograph calibrationcitations
- 2012Characterization of thickness, elemental distribution and band-gap properties in AlGaN/GaN quantum wells by aberration-corrected TEM/STEMcitations
- 2012Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEMcitations
- 2011Nanoscale EELS analysis of elemental distribution and band-gap properties in AlGaN epitaxial layerscitations
- 2010Electron microscopy of AlGaN-based multilayers for UV laser devices
- 2006Microstructural analysis of lignocellulosic fiber networkscitations
Places of action
| Organizations | Location | People |
|---|
article
Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEM
Abstract
In this study, the thickness, interface quality, and elemental composition of InGaN/GaN epitaxial layers are investigated. Samples were grown by Metal-Organic Chemical Vapour Deposition (MOCVD) on sapphire (0001) substrates. The structure was designed to form In0.1Ga0.9N quantum wells (QWs) with thicknesses decreasing from 8 nm to 0.25 nm embedded between 10 nm GaN barriers. Scanning transmission electron microscopy (S)TEM, energy-dispersive X-ray spectroscopy (EDXS) and electron energy loss spectroscopy (EELS) have been applied using both a JEOL 2010F field-emission gun (FEG) TEM/STEM microscope and the newly developed spherical aberration-corrected JEOL R005 cold FEG (S)TEM. The peak indium concentration of the widest QWs was determined to lie between 0.12 and 0.15 (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)