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Bideux, Luc
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Publications (7/7 displayed)
- 2024Angle-resolved X-ray photoelectron spectroscopy intensity modeling of SiNx ultrathin layer grown on Si (100) and Si (111) substrates by N2 plasma treatmentcitations
- 2020Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivationcitations
- 2012Carbon diffusion and reactivity in Mn5Ge3 thin filmscitations
- 2005Passivation of InP(100) substrates: first stages of nitridation by thin InN surface overlayers studied by electron spectroscopiescitations
- 2003First stages of the InP(100) surfaces nitridation studied by AES, EELS and EPEScitations
- 2003First stages of the InP(100) surfaces nitridation studied by AES, EELS and EPEScitations
- 2002Study of InP(100) surface nitridation by x-ray photoelectron spectroscopy.citations
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article
Carbon diffusion and reactivity in Mn5Ge3 thin films
Abstract
The Curie temperature of Mn5Ge3 has been successfully enhanced by carbon doping. In this context the diffusion of a carbon thin film in Mn5Ge3 has been studied at room temperature. A value of the diffusivity of about D = 2.4x10^-23 ± 0.5x10^-23 m^2.s^-1 is reported. This value is in the typical range of interstitial diffusion coefficients. Moreover Auger Ge and Mn peaks shifts and Ge3d core level have been investigated to get some details on the reactivity of carbon atoms in Mn5Ge3.