| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Shields, Philip, A.
University of Bath
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxycitations
- 2023Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxycitations
- 2022Etching of the SiGaxN yPassivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core-Shell Nanowires by MOVPEcitations
- 2021Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowirescitations
- 2021Point Defects in InGaN/GaN Core-Shell Nanorodscitations
- 2020Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscopecitations
- 2020Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrayscitations
- 2017Evolution of the m-plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structurecitations
- 2013Coalescence-induced planar defects in GaN layers grown on ordered arrays of nanorods by metal–organic vapour phase epitaxycitations
- 2012Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPEcitations
- 2011Advances in nano-enabled GaN photonic devices
- 2009Enhanced light extraction by photonic quasi-crystals in GaN blue LEDscitations
- 2007Pulsed epitaxial lateral overgrowth of GaN by metalorganic vapour phase epitaxy
Places of action
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article
Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPE
Abstract
This paper reports the direct growth by MOVPE of high-quality, crack-free III-nitrides (∼350 nm) on composite substrates comprising an ultra-thin Si (111) layer on which polycrystalline diamond (PD) has been deposited. The Si/PD substrates are designed to provide superior heat sinking performance for high power devices. The FWHM of rocking curves of the nitride films is measured to be ∼1100 arcsec from a GaN/Al 0.2Ga 0.8N/AlN/Si/PD multilayer structure. As expected from the low coefficient of thermal expansion of diamond, the epitaxial layers are under severe tensile stress. The Si (111) layer is shown to act as a compliant buffer layer between the III-nitride and the PD, i.e. the Si is under a compressive stress under the influence of GaN of larger thermal expansion coefficient, but the structure is mechanically stable. This technique is an obvious economic and technological advantage compared to direct growth of III-nitrides on single crystal diamond.