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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Derluyn, Joff
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Topics
Publications (9/9 displayed)
- 2021AlGaN channel high electron mobility transistors with regrown ohmic contactscitations
- 2020Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructurecitations
- 2019Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experimentcitations
- 20141900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removalcitations
- 2010Very low sheet resistance AlInN/GaN HEMT grown on 100 mm Si(111) by MOVPEcitations
- 2008AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength rangecitations
- 2006Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN∕GaN high-electron-mobility transistorscitations
- 2005The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaNcitations
- 2005Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layercitations
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article
Very low sheet resistance AlInN/GaN HEMT grown on 100 mm Si(111) by MOVPE
Abstract
<jats:title>Abstract</jats:title><jats:p>This paper presents results on the properties of AlInN/GaN high electron mobility transistors (HEMT) grown on 100 mm Si(111) substrates by metal organic vapour phase epitaxy (MOVPE). To the best of our knowledge this is the first demonstration of AlInN/GaN HEMT with a very low sheet resistance of 179 ± 3.9 Ω/□ on large size Si substrates. The electron density of the two dimensional electron gas (2DEG) is as high as 3.1×10<jats:sup>13</jats:sup>/cm<jats:sup>2</jats:sup>, while the electron mobility is around 1000 cm<jats:sup>2</jats:sup>/Vs. The very low sheet resistance of AlInN/GaN HEMT results in a high current density of 1.3 A/mm in device operation with a gate length of 1.5 μm. The current density of the AlInN/GaN HEMT is twice as high as our standard AlGaN/GaN HEMT with the same geometry, which shows a great potential for high power switching applications. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>