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Denlinger, J. D.
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Publications (5/5 displayed)
- 2013Highly mismatched N-rich GaN1-xSbx films grown by low temperature molecular beam epitaxycitations
- 2010Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eVcitations
- 2010Full multiple scattering analysis of XANES at the Cd L3 and OK edges in CdO films combined with a soft-x-ray emission investigationcitations
- 2009Highly mismatched crystalline and amorphous GaN1-x As x alloys in the whole composition rangecitations
- 2006Structure and electronic properties of InN and In-rich group III-nitride alloyscitations
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article
Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eV
Abstract
A new alloy system, the GaN<sub>1-x</sub>As<sub>x</sub> alloys in the whole composition range was successfully synthesized using the non-equilibrium low temperature molecular beam epitaxy method. The alloys are amorphous in the composition range of 0.17 <x <0.75 and crystalline outside this region. The amorphous films have smooth morphology, homogeneous composition and sharp, well defined optical absorption edges. The bandgap energy varies in a broad energy range from ∼3.4 eV in GaN to∼0.8 eV at x∼0.85. The reduction of the band gap can be attributed primarily to the downward movement of the conduction band for alloys with x > 0.2, and to the upward movement of the valence band for alloys with x <0.2. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.