| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Hawkridge, M.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2011Structural defects and cathodoluminescence of InxGa1-xN layerscitations
- 2010Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eVcitations
- 2010Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen productioncitations
- 2009Structural perfection of InGaN layers and its relation to photoluminescencecitations
- 2009Spontaneous stratification of InGaN layers and its influence on optical propertiescitations
Places of action
| Organizations | Location | People |
|---|
article
Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eV
Abstract
A new alloy system, the GaN<sub>1-x</sub>As<sub>x</sub> alloys in the whole composition range was successfully synthesized using the non-equilibrium low temperature molecular beam epitaxy method. The alloys are amorphous in the composition range of 0.17 <x <0.75 and crystalline outside this region. The amorphous films have smooth morphology, homogeneous composition and sharp, well defined optical absorption edges. The bandgap energy varies in a broad energy range from ∼3.4 eV in GaN to∼0.8 eV at x∼0.85. The reduction of the band gap can be attributed primarily to the downward movement of the conduction band for alloys with x > 0.2, and to the upward movement of the valence band for alloys with x <0.2. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.