Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Naji, M.
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Liliental-Weber, Z.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (25/25 displayed)

  • 2013Local structure of amorphous GaN1-xAsx semiconductor alloys across the composition range6citations
  • 2013Microstructure of Mg doped GaNAs alloys1citations
  • 2012Wurtzite-to amorphous-to cubic phase transition of GaN1-x Asx alloys with increasing As content1citations
  • 2012Structural studies of GaN 1-x As x and GaN 1-x Bi x alloys for solar cell applications3citations
  • 2011Structural defects and cathodoluminescence of InxGa1-xN layers7citations
  • 2011GaNAs alloys over the whole composition range grown on crystalline and amorphous substrates9citations
  • 2010Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eV17citations
  • 2010Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production14citations
  • 2010Amorphous GaN1-xAsx alloys for multi-junction solar cellscitations
  • 2010Low gap amorphous GaN1-x Asx alloys grown on glass substrate19citations
  • 2009Structural perfection of InGaN layers and its relation to photoluminescence17citations
  • 2009Highly mismatched crystalline and amorphous GaN1-x As x alloys in the whole composition range63citations
  • 2009Electrical and electrothermal transport in InN11citations
  • 2009Spontaneous stratification of InGaN layers and its influence on optical properties12citations
  • 2008Energetic Beam Synthesis of Dilute Nitrides and Related Alloys1citations
  • 2008Low-temperature grown compositionally graded InGaN films19citations
  • 2006Structure and electronic properties of InN and In-rich group III-nitride alloys237citations
  • 2005Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy196citations
  • 2005Transmission electron microscopy study of nonpolar a-plane GaN grown by pendeo-epitaxy on (11(2)under-bar0) 4H-SiCcitations
  • 2004Characterization and manipulation of exposed Ge nanocrystalscitations
  • 2003Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting26citations
  • 2003Growth and characterization of epitaxial GaN thin films on 4H-SiC (11.0) substratescitations
  • 2003Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs49citations
  • 2003Microstructure of nonpolar a-plane GaN grown on (1120) 4H-SiC investigated by TEM.citations
  • 2002Transparent ZnO-based ohmic contact to p-GaN3citations

Places of action

Chart of shared publication
Levander, A. X.
5 / 6 shared
Walukiewicz, W.
16 / 87 shared
Foxon, C. T.
10 / 36 shared
Wu, J.
8 / 56 shared
Dubon, O. D.
5 / 40 shared
Novikov, S. V.
10 / 22 shared
Reis, R. D.
1 / 1 shared
Levander, A.
1 / 1 shared
Reis, R. Dos
2 / 3 shared
Hawkridge, M.
5 / 5 shared
Bedair, S.
3 / 3 shared
Domagala, J. Z.
1 / 12 shared
Ogletree, D. F.
1 / 2 shared
Bak-Misiuk, J.
3 / 5 shared
Berman, A. E.
3 / 3 shared
Emara, A.
3 / 3 shared
Dubon, O.
1 / 1 shared
Luckert, F.
3 / 3 shared
Martin, R. W.
3 / 11 shared
Broesler, R.
6 / 8 shared
Denlinger, J. D.
3 / 5 shared
Kao, V. M.
2 / 2 shared
Staddon, C. R.
2 / 7 shared
Demchenko, I.
2 / 2 shared
Denlinger, J.
1 / 2 shared
Haller, E. E.
4 / 30 shared
Domagala, J.
2 / 4 shared
Khanal, D. R.
1 / 1 shared
Demchenko, I. N.
1 / 3 shared
Koblmüller, G.
1 / 3 shared
Mayer, M. A.
1 / 5 shared
Iii, H. M. Smith
1 / 1 shared
Miller, N.
2 / 3 shared
Hawkridge, M. E.
1 / 2 shared
Gallinat, C.
1 / 1 shared
Jones, R. E.
3 / 8 shared
Speck, J. S.
1 / 2 shared
Iii, J. W. Ager
2 / 18 shared
Schaff, W. J.
1 / 10 shared
Scarpulla, M. A.
3 / 23 shared
Dubón, O. D.
1 / 2 shared
Beeman, J. W.
3 / 21 shared
Jasinski, J.
3 / 3 shared
Shan, W.
1 / 16 shared
Williamson, T. L.
1 / 1 shared
Hoffbauer, M. A.
1 / 1 shared
Ager, J. W.
1 / 11 shared
Li, S. X.
1 / 5 shared
Jr., J. W. Ager
1 / 1 shared
Zakharov, Dn
4 / 5 shared
Reitmeier, Zj
3 / 4 shared
Wagner, B.
3 / 17 shared
Davis, Rf
4 / 10 shared
Xu, Q.
1 / 11 shared
Yi, D. O.
1 / 3 shared
Zakharov, D. N.
1 / 3 shared
Chrzan, D. C.
1 / 6 shared
Sharp, I. D.
1 / 6 shared
Liao, C. Y.
1 / 6 shared
Monteiro, O.
1 / 2 shared
Daud, U.
1 / 1 shared
Zakharov, D.
1 / 2 shared
Wagner, Bp
1 / 2 shared
Aziz, M. J.
1 / 2 shared
Pillai, M. R.
1 / 2 shared
Reitmeier, Z.
1 / 1 shared
Zielinski, M.
1 / 3 shared
Kudla, A.
1 / 1 shared
Barcz, A.
1 / 4 shared
Guziewicz, M.
1 / 5 shared
Golaszewska, K.
1 / 2 shared
Kruszka, R.
1 / 5 shared
Ochalski, T.
1 / 2 shared
Dietl, Tomasz
1 / 262 shared
Piotrowska, A.
1 / 22 shared
Matsukura, F.
1 / 23 shared
Wawro, A.
1 / 3 shared
Sawicki, M.
1 / 67 shared
Kaminska, E.
1 / 19 shared
Chart of publication period
2013
2012
2011
2010
2009
2008
2006
2005
2004
2003
2002

Co-Authors (by relevance)

  • Levander, A. X.
  • Walukiewicz, W.
  • Foxon, C. T.
  • Wu, J.
  • Dubon, O. D.
  • Novikov, S. V.
  • Reis, R. D.
  • Levander, A.
  • Reis, R. Dos
  • Hawkridge, M.
  • Bedair, S.
  • Domagala, J. Z.
  • Ogletree, D. F.
  • Bak-Misiuk, J.
  • Berman, A. E.
  • Emara, A.
  • Dubon, O.
  • Luckert, F.
  • Martin, R. W.
  • Broesler, R.
  • Denlinger, J. D.
  • Kao, V. M.
  • Staddon, C. R.
  • Demchenko, I.
  • Denlinger, J.
  • Haller, E. E.
  • Domagala, J.
  • Khanal, D. R.
  • Demchenko, I. N.
  • Koblmüller, G.
  • Mayer, M. A.
  • Iii, H. M. Smith
  • Miller, N.
  • Hawkridge, M. E.
  • Gallinat, C.
  • Jones, R. E.
  • Speck, J. S.
  • Iii, J. W. Ager
  • Schaff, W. J.
  • Scarpulla, M. A.
  • Dubón, O. D.
  • Beeman, J. W.
  • Jasinski, J.
  • Shan, W.
  • Williamson, T. L.
  • Hoffbauer, M. A.
  • Ager, J. W.
  • Li, S. X.
  • Jr., J. W. Ager
  • Zakharov, Dn
  • Reitmeier, Zj
  • Wagner, B.
  • Davis, Rf
  • Xu, Q.
  • Yi, D. O.
  • Zakharov, D. N.
  • Chrzan, D. C.
  • Sharp, I. D.
  • Liao, C. Y.
  • Monteiro, O.
  • Daud, U.
  • Zakharov, D.
  • Wagner, Bp
  • Aziz, M. J.
  • Pillai, M. R.
  • Reitmeier, Z.
  • Zielinski, M.
  • Kudla, A.
  • Barcz, A.
  • Guziewicz, M.
  • Golaszewska, K.
  • Kruszka, R.
  • Ochalski, T.
  • Dietl, Tomasz
  • Piotrowska, A.
  • Matsukura, F.
  • Wawro, A.
  • Sawicki, M.
  • Kaminska, E.
OrganizationsLocationPeople

article

Low-temperature grown compositionally graded InGaN films

  • Williamson, T. L.
  • Hoffbauer, M. A.
  • Liliental-Weber, Z.
  • Walukiewicz, W.
  • Jones, R. E.
  • Miller, N.
  • Haller, E. E.
  • Ager, J. W.
Abstract

A new thin film growth technique known as energetic neutral atomic-beam lithography/epitaxy (ENABLE) provides a large energetic N atom flux and eliminates the need for high substrate temperatures as compared to molecular beam epitaxy, making isothermal growth over the entire InGaN alloy composition range possible without phase separation. 500-800 nm thick compositionally graded InGaN films were grown by ENABLE at ∼450°C with the following structure types: (1) with the Ga-rich material on the surface and (2) with the Inrich material on the surface. Rutherford backscattering spectrometry, transmission electron microscopy, X-ray diffraction, absorption spectroscopy, photoluminescence, and Hall effect measurements were used to assess the thickness, composition, crystalline quality, and optical and electrical properties of the films. The results establish the new ENABLE method as uniquely capable of growing compositionally graded InGaN films and, in the future, InN/GaN heterostructures. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

Topics
  • surface
  • photoluminescence
  • phase
  • x-ray diffraction
  • thin film
  • transmission electron microscopy
  • spectrometry
  • lithography
  • alloy composition
  • Rutherford backscattering spectrometry