| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Guedj, Cyril
CEA LETI
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Homo-epitaxial growth of LiNbO3 thin films by Pulsed Laser depositioncitations
- 2019Atomistic modelling of diamond-type Si x Ge y C z Sn1− x − y − z crystals for realistic transmission electron microscopy image simulations
- 2019Atomistic modelling of diamond-type Si<i>x</i>Ge<i>y</i>C<i>z</i>Sn1−<i>x</i>−<i>y</i>−<i>z</i> crystals for realistic transmission electron microscopy image simulations
- 2018Impact of Hydrogen on Graphene-based Materials: Atomistic Modeling and Simulation of HRSTEM Images
- 2016Measurement of energy‐loss anisotropy along [001] in monoclinic hafnia and comparison with ab‐initio simulations
- 2014Evidence for anisotropic dielectric properties of monoclinic hafnia using valence electron energy-loss spectroscopy in high-resolution transmission electron microscopy and <i>ab initio</i> time-dependent density-functional theorycitations
- 2013Measurement of Complex Conductance in the PHz Frequency Range with Subnanometric Spatial Resolution: Application to the Grain Boundary of Monoclinic Hafniacitations
- 2008Evaluation of ellipsometric porosimetry for in‐line characterization of ultra low‐κ dielectricscitations
- 2006Influence of electron-beam and ultraviolet treatments on low-k porous dielectricscitations
Places of action
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article
Evaluation of ellipsometric porosimetry for in‐line characterization of ultra low‐κ dielectrics
Abstract
<jats:title>Abstract</jats:title><jats:p>Ellipsometric porosimetry (EP) has recently appeared to be a suitable non‐destructive technique for the characterization of porous ultra low‐κ (ULK) dielectrics. The analysis of ellipsometric spectra of a film during adsorption and desorption cycles of an adsorptive, allows the determination of its open pore fraction, pore size distribution, refractive index and thickness. Several issues are encountered when integrating low‐κ materials as inter‐metal dielectrics (IMD) in the CMOS architecture such as the deposition monitoring, the pore sealing efficiency and the process induced damages. In this study we focus on the capabilities of EP to characterize ULK materials and their integration processes. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>