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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Figge, S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2013Phase diagram and critical behavior of the random ferromagnet Ga1-xMnxNcitations
- 2012Ga1-xMnxN epitaxial films with high magnetizationcitations
- 2007Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphirecitations
- 2007Defect distribution in a-plane GaN on Al2O3citations
- 2006Anti-diffusion barriers for gold-based metallizations to p-GaN
- 2006High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphirecitations
- 2006Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by X-ray photoemission spectro-microscopycitations
- 2005Microstructure of highly p-type doped GaN sub-contact layers for low-resistivity contacts
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booksection
Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphire
Abstract
To obtain a deeper insight into the mechanism of defect formation in a-plane GaN the defect nature in such films grown by metal-organic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) was investigated by means of transmission electron microscopy. The films showed, beside the frequently found basal plane stacking faults and threading dislocations, prismatic stacking faults originating at the film/substrate interface and facetted voids. The density of basal plane stacking fault was about 10(5) cm(-1) and the density of partial dislocations was in the range of 10(10) cm(-2), accordingly. Using selected area diffraction the epitaxial relationship between film and layer was determined. Based on these findings the impact of lattice mismatch on the observed defect characteristic is discussed. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.