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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kroger, Roland
University of York
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2016Semiconductor-Metal Nano-Floret Hybrid Structures by Self-Processing Synthesiscitations
- 2013Microstructural evolution and nanoscale crystallography in scleractinian coral spherulitescitations
- 2013Formation and Structure of Calcium Carbonate Thin Films and Nanofibers Precipitated in the Presence of Poly(Allylamine Hydrochloride) and Magnesium Ionscitations
- 2011An artificial biomineral formed by incorporation of copolymer micelles in calcite crystalscitations
- 2008Interaction of Stacking Faults in Wurtzite a-Plane GaN on r-Plane Sapphire
- 2008The role of anisotropy for defect properties in a-plane GaN
- 2008The role of anisotropy for the defect properties in a-plane GaN - art. no. 689403
- 2007On the mechanism of dislocation and stacking fault formation in a-plane GaN films grown by hydride vapor phase epitaxy
- 2007Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphirecitations
- 2006The versatility of hot-filament activated chemical vapor depositioncitations
- 2006Anti-diffusion barriers for gold-based metallizations to p-GaN
- 2006TEM analyses of wurtzite InGaN islands grown by MOVPE and MBEcitations
- 2006Anisotropic spatial correlation of CdSe/Zn(S)Se quantum dot stacks grown by MBEcitations
- 2006Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by X-ray photoemission spectro-microscopycitations
- 2005Surfactant-mediated epitaxy of Ge on Si(111)citations
- 2005Microstructure of highly p-type doped GaN sub-contact layers for low-resistivity contacts
- 2004Determination of the anisotropic optical properties for perfluorinated vanadyl phthalocyanine thin filmscitations
- 2004Microstructural study of quantum well degradation in ZnSe-based laser diodes
- 2002On the way to the II-VI quantum dot VCSELcitations
- 2002Plasma induced microstructural, compositional, and resistivity changes in ultrathin chemical vapor deposited titanium nitride filmscitations
Places of action
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booksection
Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphire
Abstract
To obtain a deeper insight into the mechanism of defect formation in a-plane GaN the defect nature in such films grown by metal-organic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) was investigated by means of transmission electron microscopy. The films showed, beside the frequently found basal plane stacking faults and threading dislocations, prismatic stacking faults originating at the film/substrate interface and facetted voids. The density of basal plane stacking fault was about 10(5) cm(-1) and the density of partial dislocations was in the range of 10(10) cm(-2), accordingly. Using selected area diffraction the epitaxial relationship between film and layer was determined. Based on these findings the impact of lattice mismatch on the observed defect characteristic is discussed. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.