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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Pirasteh, Parastesh
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Topics
Publications (11/11 displayed)
- 2020Porosity calibration in a 4-layer porous silicon structure to fabricate a micro-resonator with well-defined refractive indices and dedicated to biosensing applicationscitations
- 2018Toward hybrid polymer-porous silicon waveguides for Vernier-effect optical biosensors
- 2017Chalcogenides photonic integrated circuits for near- and mid-infrared applications
- 2017Chalcogenides photonic integrated circuits for near- and mid-infrared applications
- 2012Ultra-low reflection porous silicon nanowires for solar cell applicationscitations
- 2012Fluoride and oxyfluoride glasses for optical applicationscitations
- 2007A new approach based on transfer matrix formalism to characterize porous silicon layers by reflectometrycitations
- 2006A new approach based on transfer matrix formalism to characterize porous silicon layers by reflectometrycitations
- 2005Light propagation scattering in porous silicon nanocomposite waveguidescitations
- 2005Light propagation scattering in porous silicon nanocomposite waveguidescitations
- 2004Light propagation and scattering in porous silicon nanocomposite waveguidescitations
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document
A new approach based on transfer matrix formalism to characterize porous silicon layers by reflectometry
Abstract
We use reflectometry coupled to transfer matrix formalism in order to investigate the comparative effect of surface (localized) and volume (distributed) losses inside a porous silicon monolayer. Both are modeled as fictive absorption. Surface losses are described as a Dirac-like singularity of permittivity localized at an interface whereas volume losses are described trough the imaginary part of the porous silicon complex permittivity. A good agreement with experimental data is determined by this formalism.