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Szmidt, Jan
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024The Preparation and Properties of a Hydrogen-Sensing Field-Effect Transistor with a Gate of Nanocomposite C-Pd Film
- 2020Hydrogen sensor based on field effect transistor with C-Pd layercitations
- 2020Field effect transistor with thin AlOxNy film as gate dielectric
- 2019Technology and characterization of ISFET structures with graphene membranecitations
- 2019Influence of annealing on electronic properties of thin AlN films deposited by magnetron sputtering method on silicon substratescitations
- 2018Capillary Sensors with UV-Forced Degradation and Fluorescence Reading of Chemical Stability and Polycyclic Aromatic Hydrocarbons Presence in Diesel Fuels
- 2018Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structurescitations
- 2015Depth Profile Analysis of Phosphorus Implanted SiC Structurescitations
- 2013Application of scanning microscopy to study correlation between thermal properties and morphology of BaTiO3 thin filmscitations
- 2013Plasma etching of aluminum nitride thin films prepared by magnetron sputtering method
- 2013Characterization of thin Gd2O3 magnetron sputtered layers citations
- 2011Electronic properties of BaTiO<sub>3</sub>/4H-SiC interfacecitations
- 2009Electric Characterization and Selective Etching of Aluminum Oxidecitations
- 2007Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF<inf>4</inf> mixture gas mixing ratiocitations
- 2006Optical fiber switch for sensor networks: design principles
- 2001Electronic properties of unipolar heterostructures amorphous carbon diamond - amorphous carbon
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article
Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF<inf>4</inf> mixture gas mixing ratio
Abstract
<p>BaTiO<sub>3</sub> (BT) nanocrystalline thin films were plasma etched in the course of several experiments which varied in RF power as well as CF <sub>4</sub>/(CF<sub>4</sub> + Ar) gas-mixing ratio. The maximum etch rate of approximately 30 nm/min was observed for the maximum power (300 W) and pure Ax plasma atmosphere, which indicates that the process is controlled by the physical mechanism of Ax ion bombardment, while the increasing content of chemically active plasma component (CF<sub>4</sub>) in the gas mixture slows down barium titanate etch rate. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.</p>