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- 2021TiAl-based Ohmic Contacts to p-type 4H-SiC
- 2020Ti and TiAl-based ohmic contacts to 4H-SiCcitations
- 2016Electrical characterization of ZnO/4H-SiC n–p heterojunction diodecitations
- 2013Reactive impulse plasma ablation deposited barium titanate thin films on siliconcitations
- 2007Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF<inf>4</inf> mixture gas mixing ratiocitations
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article
Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF<inf>4</inf> mixture gas mixing ratio
Abstract
<p>BaTiO<sub>3</sub> (BT) nanocrystalline thin films were plasma etched in the course of several experiments which varied in RF power as well as CF <sub>4</sub>/(CF<sub>4</sub> + Ar) gas-mixing ratio. The maximum etch rate of approximately 30 nm/min was observed for the maximum power (300 W) and pure Ax plasma atmosphere, which indicates that the process is controlled by the physical mechanism of Ax ion bombardment, while the increasing content of chemically active plasma component (CF<sub>4</sub>) in the gas mixture slows down barium titanate etch rate. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.</p>