693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Figge, S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2013Phase diagram and critical behavior of the random ferromagnet Ga1-xMnxNcitations
- 2012Ga1-xMnxN epitaxial films with high magnetizationcitations
- 2007Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphirecitations
- 2007Defect distribution in a-plane GaN on Al2O3citations
- 2006Anti-diffusion barriers for gold-based metallizations to p-GaN
- 2006High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphirecitations
- 2006Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by X-ray photoemission spectro-microscopycitations
- 2005Microstructure of highly p-type doped GaN sub-contact layers for low-resistivity contacts
Places of action
| Organizations | Location | People |
|---|
booksection
Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by X-ray photoemission spectro-microscopy
Abstract
The surface segregation of Mg and Si dopant species in GaN films has been investigated by means of combined X-ray photoemission spectroscopy and microscopy. For both species, a segregation tendency was detected. Comparing Mg doped samples before and after Ar ion sputtering, a Mg surface enrichment is concluded on that extends at least over several atomic layers. For Si doped films, the formation of facetted cracks with threefold symmetry was observed. The Si surface concentration was found to be enhanced at the facets of these cracks by a factor of 2.5 with respect to the c-plane surface. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.