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Homeyer, Estelle
Institut Lumière Matière
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2013Enhanced light extraction from InGaN/GaN quantum wells with silver gratingscitations
- 2006Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µmcitations
- 2006Influence of the number of quantum dots stacks on the threshold current density of 1.55 µm InAs/InP(311)B semiconductor lasers
- 2005Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µmcitations
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document
Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µm
Abstract
This paper presents the temperature dependent characteristics of a semiconductor laser with a single quantum dot (QD) layer on InP(311)B substrate. The laser emits in the optical telecommunication wavelength band near 1.55 µm and shows a threshold current density of 6 A/cm2 at low temperature, attesting excellent material quality. Laser spectra obtained under electrical injection for different temperatures show a drastic influence on their shape. A large spectral broadening is observed at low temperature, while it dramatically narrows close to room temperature. This is due to homogeneous broadening of each QD with increasing temperature, favouring a collective emission of the QDs and homogeneous gain.