• Hunter, Daniel. A.
• Massabuau, Fabien C. P.
• Hatipoglu, Isa
• Martin, Robert
• Nareshkumar, Gunasekar
• Makydonska, Olha
• Schoenfeld, Winston V.
• Edwards, Paul R.
• Mukhopadhyay, Partha

Abstract

<jats:p>Electron beam techniques have been used to analyze the impact of substrate choice and growth parameters on the compositional and optical properties of tin gallium oxide [(Sn<jats:sub><jats:italic>x</jats:italic></jats:sub>Ga<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>)<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>] thin films grown by plasma‐assisted molecular beam epitaxy. Sn incorporation and film quality are found to be highly dependent on growth temperature and substrate material (silicon, sapphire, and bulk Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) with alloy concentrations varying up to an <jats:italic>x</jats:italic> value of 0.11. Room temperature cathodoluminescence spectra show the Sn alloying suppressing UV (3.3–3.0 eV), enhancing blue (2.8–2.4 eV), and generating green (2.4–2.0 eV) emission, indicative of the introduction of a high density of gallium vacancies (<jats:italic>V</jats:italic><jats:sub>Ga</jats:sub>) and subsequent <jats:italic>V</jats:italic><jats:sub>Ga</jats:sub>–Sn complexes. This behavior was further analyzed by mapping composition and luminescence across a cross section. Compared to Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>, the spectral bands show a clear redshift due to bandgap reduction, confirmed by optical transmission measurements. The results show promise that the bandgap of gallium oxide can successfully be reduced through Sn alloying and used for bandgap engineering within UV optoelectronic devices.</jats:p>

Topics

• density
• thin film
• Silicon
• tin
• Gallium
• luminescence